Electrical characteristics of ultra-thin gate oxides (&lt;3 nm) prepared by direct current superimposed with alternating-current anodization

Chen, Zhihao; Huang, Szu-Wei; Hwu, Jenn–Gwo

doi:10.1016/s0038-1101(03)00257-0

Cited by 7 publications

(4 citation statements)

References 9 publications

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“…As shown in Figure 5, the contact angle of the treated substrate surface was 77.8° at 0 V while the contact angle changed to approximately 60° with 60 V. When putting the stainless steel substrate in the cathode side, the contact angle of the treated substrate surface was 77.8° at 0 V, while the contact angle of the stainless steel substrate declined to 11.06° at −60 V. During the DI water dissociation process, the hydrogen and hydroxyl groups were respectively attracted to the anode and cathode regions by the DC voltage. The formation of the hydrogen and hydroxyl groups by the DC voltage during the DI water dissociation process can be expressed as follows [32]:

2 H_{2} O \to H_{3} O^{+} + O H^{-}

…”

Section: Resultsmentioning

confidence: 99%

P(VDF-TrFE) Polymer-Based Thin Films Deposited on Stainless Steel Substrates Treated Using Water Dissociation for Flexible Tactile Sensor Development

Tseng

Tian

2013

Sensors

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In this work, deionized (DI) water dissociation was used to treat and change the contact angle of the surface of stainless steel substrates followed by the spin coating of P(VDF-TrFE) material for the fabrication of tactile sensors. The contact angle of the stainless steel surface decreased 14° at −30 V treatment; thus, the adhesion strength between the P(VDF-TrFE) thin film and the stainless steel substrate increased by 90%. Although the adhesion strength was increased at negative voltage treatment, it is observed that the crystallinity value of the P(VDF-TrFE) thin film declined to 37% at −60 V. In addition, the remanent polarization value of the P(VDF-TrFE) thin film declined from 5.6 μC/cm2 to 4.61 μC/cm2 for treatment voltages between −5 V and −60 V. A maximum value of approximately 1000 KV/cm of the coercive field value was obtained with the treatment at −15 V. The d33 value was approximately −10.7 pC/N for the substrate treated at 0 V and reached a minimum of −5 pC/N for treatment at −60 V. By using the P(VDF-TrFE) thin-film as the sensing material for tactile sensors, human pulse measurements were obtained from areas including the carotid, brachial, ankle, radial artery, and apical regions. In addition, the tactile sensor is suitable for monitoring the Cun, Guan, and Chi acupoints located at the radial artery region in Traditional Chinese Medicine (TCM). Waveform measurements of the Cun, Guan, and Chi acupoints are crucial because, in TCM, the various waveforms provided information regarding the health conditions of organs.

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2 H_{2} O \to H_{3} O^{+} + O H^{-}

…”

Section: Resultsmentioning

confidence: 99%

P(VDF-TrFE) Polymer-Based Thin Films Deposited on Stainless Steel Substrates Treated Using Water Dissociation for Flexible Tactile Sensor Development

Tseng

Tian

2013

Sensors

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“…It is observed that is reduced after the anodization treatment as the weak spots and traps in gate oxides are repaired and modified during the anodization process. At the moment of voltage switching, the redistribution and reselection of OH ions, which are frequency-related, will move toward the leaky path and repair the defects in the oxides [10]. The OH ions can only passivate the imperfect dangling bonds in the interface areas related to leaky paths but not interact with the interface areas protected by perfect bulk oxides in the low electric field.…”

Section: Resultsmentioning

confidence: 99%

Quality Improvement of Ultrathin Gate Oxide by Using Thermal Growth Followed by SF ANO Technique

Yang

Hwu

2004

IEEE Electron Device Lett.

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Rapid thermal oxide followed by anodization in direct current superimposed with scanning frequency alternating current was demonstrated for the first time to have an improved quality in ultrathin gate oxides. Compared with the thermal oxide grown without the scanning-frequency anodization (SF ANO) treatment, the gate leakage current density ( ) of SF ANO sample is significantly reduced without increasing the thickness of gate oxide. In addition, it could be observed that the interface trap density ( it ) is reduced with tighter distribution. It is suggested that the bulk traps and interface traps in thermally grown oxide can be repaired during the SF ANO process.Index Terms-Metal-oxide-semiconductor (MOS), scanning frequency anodization (SF ANO), ultrathin gate oxide.

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“…Meanwhile, anodization in DI water is simple. It is expected that the oxide thickness uniformity and the electrical performance of MOS structure solar cells can be further improved by growing oxides with dc superimposed with ac anodization technique, 15 which will be studied in the near future.…”

Section: Methodsmentioning

confidence: 99%

Metal–Oxide–Semiconductor Structure Solar Cell Prepared by Low-Temperature (<400°C) Anodization Technique

Wang

Hwu

2009

J. Electrochem. Soc.

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In this work, simple and low-cost metal–oxide–semiconductor (MOS) structure solar cells with silicon dioxide prepared by anodization technique in deionized water at room temperature are proposed. The characteristics of MOS structure solar cells are dependent on anodization time. It was observed that the efficiency and the leakage current density of MOS structure solar cells increase when the anodization time decreases. Oxide thickness is critical for the MOS structure solar cell and it can be controlled by anodization techniques. For a cell exposed under 1000W∕normalm2 , efficiency up to 9.7% was demonstrated in this work.

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Electrical characteristics of ultra-thin gate oxides (<3 nm) prepared by direct current superimposed with alternating-current anodization

Cited by 7 publications

References 9 publications

P(VDF-TrFE) Polymer-Based Thin Films Deposited on Stainless Steel Substrates Treated Using Water Dissociation for Flexible Tactile Sensor Development

P(VDF-TrFE) Polymer-Based Thin Films Deposited on Stainless Steel Substrates Treated Using Water Dissociation for Flexible Tactile Sensor Development

Quality Improvement of Ultrathin Gate Oxide by Using Thermal Growth Followed by SF ANO Technique

Metal–Oxide–Semiconductor Structure Solar Cell Prepared by Low-Temperature (<400°C) Anodization Technique

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