Electrical characterization and morphological properties of AlN films prepared by dc reactive magnetron sputtering

Structural and Optical Properties of Aluminum Nitride Thin Films Deposited by Pulsed DC Magnetron Sputtering

“…It is clear that deposition rate decreases continuously with increase in flow ratio of nitrogen/argon mainly because of the increased proportion of N + or N 2 + ions which transfer lower momentum to the target compared to the massive Ar + ion; consequently, energy and fluence of the sputtered atoms decrease and this leads to a gradual fall in the growth rate of the film [14].…”

“…The measured average roughness ( ) values showed no marked effect of varying the nitrogen/argon flow ratio; for all the films, values were in the range 6-8 nm. Some authors have reported decreased roughness of AlN film with increasing flow ratio of nitrogen/argon, attributing it to the lower growth rate of the film [14].…”

Role of oxygen contaminant on the physical properties of sputtered AlN thin films

“…Deposition of AlN films at low temperature is a "must", since a high temperature of the substrate during the film growth is not compatible with the processing steps of fabrication of the device. From this point of view, reactive sputtering is a good candidate for large scale production of AlN thin films [11], as it allows low processing temperatures and fine tuning of film properties. On the other hand, one of the main drawbacks of plasma processes is the significant effect of impurity incorporation during deposition [12].…”

High-quality AlN films grown on chemical vapor-deposited graphene films

“…Aluminum nitride has a variety of excellent physical properties, such as a high melting point (3273 K), high thermal conductivity (285 W/mK), high direct band gap (6.2 Ev), good dielectric constant (8.5) and high hardness (about ~ 2×103 kgf mm-2) [13,14,15]. Common ways of depositing aluminum nitride films include DC and RF magnetron sputtering [13][14][15][16][17][18], chemical vapor deposition [19,20], and molecular beam epitaxy [21]. However, the CVD and MBE methods can only be used at high temperatures, and this limits the base materials that can be used, and if the resulting grains are too big then this will lead to a rough surface, and so it will not be possible to easily manufacture electrodes on the films.…”