Electrical Characterization at Cubic AlN/GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Kitamura, Tatsuya; Ishida, Yuuki; Shen, Xu–Qiang; Nakanishi, H.; Chichibu, S. F.; Shimizu, Mitsuaki; Okumura, Hajime

doi:10.1002/1521-3951(200111)228:2<599::aid-pssb599>3.0.co;2-f

Cited by 3 publications

(1 citation statement)

References 8 publications

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“…The optimized growth temperature appeared to be 300 C, which is much lower than those of films prepared by other deposition methods. [17][18][19][20][21][22] The XRD -scan of the (101) peak of the AlN film, the (101) peak of the GaN film, and the (104) peak of the sapphire substrate with the rotation axis parallel to the caxis of the films were carried out in order to investigate the in-plane orientation relationship between the AlN film, GaN film and sapphire substrate. Figures 3(a)-3(c) show the XRD -scan patterns for AlN, GaN, and sapphire, respectively.…”

Section: Epitaxial Growth Of Aln On Gan/sapphirementioning

confidence: 99%

Epitaxial AlN Thin Film Surface Acoustic Wave Devices Prepared on GaN/Sapphire Using Low-Temperature Helicon Sputtering System

Kao

Chen

Chien

et al. 2008

jjap

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High-quality epitaxial AlN films have been deposited on GaN/sapphire using helicon sputtering at a temperature of 300 C. The surface acoustic wave (SAW) characteristics, in terms of insertion loss, stopband rejection, and electromechanical coupling coefficient, of SAW devices fabricated on AlN/GaN/sapphire are much superior than those fabricated on GaN/ sapphire. The investigation of environmental effects, including temperature and relative humidity, shows that the ambient stability can be improved with the deposition of an AlN film on GaN/sapphire. An oscillator fabricated using an AlN/GaN/ sapphire-based SAW device was developed for application in sensors. The composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and utilize their semiconducting, optoelectronic, and piezoelectric properties.

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Section: Epitaxial Growth Of Aln On Gan/sapphirementioning

confidence: 99%

Epitaxial AlN Thin Film Surface Acoustic Wave Devices Prepared on GaN/Sapphire Using Low-Temperature Helicon Sputtering System

Kao

Chen

Chien

et al. 2008

jjap

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AlN/GaN heterostructure prepared using a low‐temperature helicon sputtering system

Chien

Kao³

et al. 2007

Physica Status Solidi (a)

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Single‐crystalline AlN thin films were epitaxially deposited on GaN/sapphire at a low temperature of 300 °C using a helicon sputtering system. The crystallinity of the AlN films and the in‐plane axes relation between the films and substrates were characterized by X‐ray rocking curve and phi‐scan measurements. The two‐dimensional electron gases induced at the AlN/GaN heterojunction were investigated and a sheet carrier concentration up to 1.24 × 1013 cm–2 was observed by Hall effect measurement. The results justify the attraction of this low temperature grown AlN/GaN heterostructure for use in high‐power, high‐speed and high‐temperature electronics. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Two‐dimensional electron gas in cubic Al_x Ga_1–xN/GaN heterostructures

Potthast

Schörmann

Fernandez

et al. 2006

Phys. Status Solidi (c)

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We report on the optical and electrical properties of cubic Al x Ga 1-x N/GaN heterostructures. The optical properties were investigated by photoluminescence measurements. A luminescence band at 3.250 eV was observed with our cubic Al x Ga 1-x N/GaN heterostructures. The emission lies between the excitonic emission of c-GaN at 3.276 eV and the donor-acceptor transition at about 3.135 eV. With increasing excitation power we find a characteristic blue shift of 4.5 meV/decade. To confirm the existence of a twodimensional electron gas the transition energy versus externally applied voltage has been investigated. A 1.3 meV/V shift was measured and quantitatively verified by a self consistent solution of the Schrödinger and Poisson equation. The electrical properties were determined by capacity-voltage (CV)-measurements. The measured carrier profile is in excellent agreement with theoretical simulations and showed a sheet carrier concentration up to n = 1.6x10 12 cm -2 at the Al x Ga 1-x N/GaN interface.

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Electrical Characterization at Cubic AlN/GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Cited by 3 publications

References 8 publications

Epitaxial AlN Thin Film Surface Acoustic Wave Devices Prepared on GaN/Sapphire Using Low-Temperature Helicon Sputtering System

Epitaxial AlN Thin Film Surface Acoustic Wave Devices Prepared on GaN/Sapphire Using Low-Temperature Helicon Sputtering System

AlN/GaN heterostructure prepared using a low‐temperature helicon sputtering system

Two‐dimensional electron gas in cubic Al_x Ga_1–xN/GaN heterostructures

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Electrical Characterization at Cubic AlN/GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Cited by 3 publications

References 8 publications

Epitaxial AlN Thin Film Surface Acoustic Wave Devices Prepared on GaN/Sapphire Using Low-Temperature Helicon Sputtering System

Epitaxial AlN Thin Film Surface Acoustic Wave Devices Prepared on GaN/Sapphire Using Low-Temperature Helicon Sputtering System

AlN/GaN heterostructure prepared using a low‐temperature helicon sputtering system

Two‐dimensional electron gas in cubic Alx Ga1–xN/GaN heterostructures

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Two‐dimensional electron gas in cubic Al_x Ga_1–xN/GaN heterostructures