AlN/GaN heterostructure prepared using a low‐temperature helicon sputtering system

Wu, Jia‐Ren; Chien, Wen-Chen; Kao, H. L.; Chyi, Jen Inn; Hsu, Chia‐Hung

doi:10.1002/pssa.200723110

Cited by 4 publications

(3 citation statements)

References 15 publications

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“…Experimentally, AlN thin films used in this study were deposited on Si-doped (2 × 10 17 cm −3 ) GaN template, prepared by metal-organic chemical-vapor deposition (MOCVD) [ 18 ], using the helicon sputtering system which with an average thickness of about 400 nm. The detailed growth procedures of AlN thin films can be found elsewhere [ 19 ].…”

Section: Methodsmentioning

confidence: 99%

Berkovich Nanoindentation on AlN Thin Films

2010

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Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD) derived Si-doped (2 × 1017 cm−3) GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB) milling to accurately position the cross-section of the nanoindented area. The hardness and Young’s modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The obtained values of the hardness and Young’s modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple “pop-ins” observed in the load–displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load–displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices.

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Section: Methodsmentioning

confidence: 99%

Berkovich Nanoindentation on AlN Thin Films

2010

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“…This superior result may be due to the fact that the sputtered atoms have a longer mean free path and undergo less scattering, and thus possess higher kinetic energy on the substrate surface when deposited at a lower pressure than conventional magnetron sputtering. Similar results of film quality obtained in the ultrathin AlN film grown on GaN have been published earlier 17.…”

Section: Resultsmentioning

confidence: 65%

Fabrication study of AlN solar‐blind (<280 nm) MSM photodetectors grown by low‐temperature deposition

Chen

Chang

Chen

et al. 2010

Physica Status Solidi (a)

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AlN, an important semiconductor with the widest band gap among III‐nitrides, was employed to construct solar blind metal–semiconductor–metal photodetectors (MSM‐PDs). MSM‐PDs were fabricated on AlN epitaxial thin films deposited on GaN/sapphire using a helicon sputtering system at a low temperature of 300 °C. The dark current of the device is as low as 200 fA at 20 V and the photocurrent illuminated by a D2 lamp increases more than two orders of magnitude. The photocurrent increases almost linearly with the incident optical power at the wavelength of 200 nm. The results show that the low temperature grown AlN MSM device is suitable for the application of deep UV detection.

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“…The performance parameters of AlN/GaN IMPATT and MITATT diodes are consistent with those of Al0.4Ga0.6N/GaN IMPATT device running at close frequency range in the reference [4] , which implies the calculation reliability here. On the other hand, the AIN/GaN hetero-structure may be easier realized than the AlxGa1-xN/GaN and AlxGa1-xAs/GaAs ones [9][10] , because there is no need to strictly control the molar ratio of each component in the ternary alloy, which predicts that the AlN/GaN IMPATT diodes may be as promising candidate of Terahertz power source.…”

Section: Resultsmentioning

confidence: 99%

Optimal Design of Large Signal Performance of AlN/GaN Hetero-Structural IMPATT and MITATT Diodes

Wei

Zheng

et al. 2020

MSF

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Hetero-structure of AlxGa1-xN/GaN exhibits important applications in high frequency and large power devices. In this paper, AlN/GaN is adopted to optimal design the large power impact avalanche transit time (IMPATT) and mixed tunneling avalanche transit time (MITATT) diodes operating at the atmospheric low loss window frequency of 0.85 THz. The static state and large signal characteristics of the devices are numerically simulated. The values of peak electric field strength, break-down voltage, avalanche voltage, the maximum generation rates of avalanche and tunneling, admittance-frequency relation, output power, conversion efficiency, quality factor of the proposed hetero-structural IMPATT and MITATT diodes are calculated, respectively. Via comparing the obtained results of (n)AlN/(p)GaN and (n)GaN/(p)AlN IMPATT diodes to those of the MITATT counterparts, there exists little performance difference between IMPATT and MITATT devices while implies significant difference between the (n)AlN/(p)GaN and (n)GaN/(p)AlN diodes.

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AlN/GaN heterostructure prepared using a low‐temperature helicon sputtering system

Cited by 4 publications

References 15 publications

Berkovich Nanoindentation on AlN Thin Films

Berkovich Nanoindentation on AlN Thin Films

Fabrication study of AlN solar‐blind (<280 nm) MSM photodetectors grown by low‐temperature deposition

Optimal Design of Large Signal Performance of AlN/GaN Hetero-Structural IMPATT and MITATT Diodes

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