Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current–voltage and capacitance–voltage methods

Aydín, M.E.; Yakuphanoğlu, F.; Eom, Jae‐Hoon; Hwang, Do‐Hoon

doi:10.1016/j.physb.2006.04.012

Cited by 160 publications

(53 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Past to present, schottky diodes or contacts have attracted the interest on their conduction mechanism and barrier height and, they have been mostly investigated several times by many researchers [3]- [7].…”

Section: Introductionmentioning

confidence: 99%

The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si3N4/p-Si device

Orak¹,

Koçyiğit²

2017

Pamukkale J Eng Sci

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si3N4/p-Si device

Orak¹,

Koçyiğit²

2017

Pamukkale J Eng Sci

View full text Add to dashboard Cite

show abstract

“…In general, the physical properties of the metal/semiconductor interface depend on the surface preparation methods, which ultimately affect the performance, electrical properties, stability and reliability of the metal-semiconductor based devices [7,8]. A resonant tunnel diode consists of a quantum well separated from two electrical contacts by two tunnel barriers.…”

Section: Introductionmentioning

confidence: 99%

Al/Cufes2/Ito Behaves Like Switch Device With Negative Differential Resistance

AnimeshLayek¹

2017

IJRET

View full text Add to dashboard Cite

show abstract

“…Over the recent decades, there have been significant advances in the scientific domain with regard to electronic devices that are based upon organic components, mainly due to that they have a number of advantages such as easy and low cost device fabrication, versatility of usage, and large area coverage [4][5][6][7][8][9][10][11][12]. * corresponding author; e-mail: admkirsoy@yahoo.com A common thiophone-based donor material is poly(3-hexylthiophene) or P3HT.…”

Section: Introductionmentioning

confidence: 99%

The Electrical Properties of Au/P3HT/n-GaAs Schottky Barrier Diode

et al. 2015

View full text Add to dashboard Cite

In this study, we investigated the electrical properties of the Au/P3HT/n-GaAs Schottky diode at room temperature by using current-voltage method. The values of ideality factor and barrier height of the diode were found to be 2.45 and 0.85 eV, respectively. n ideality factor greater than unity indicates that the diode exhibits non-ideal current-voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. These values were also determined from the Cheung functions and the Norde method due to the non-ideal behavior of the diode and it was seen that there was an agreement with series resistance. Also the interface states energy distribution of the diode was determined from the forward bias I-V measurements by taking into account the bias dependence of the effective barrier height. The obtained electrical parameters of the Au/P3HT/n-GaAs Schottky diode are higher than that of the conventional Au/n-GaAs Schottky diodes.

show abstract

Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current–voltage and capacitance–voltage methods

Cited by 160 publications

References 32 publications

The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si3N4/p-Si device

The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si3N4/p-Si device

Al/Cufes2/Ito Behaves Like Switch Device With Negative Differential Resistance

The Electrical Properties of Au/P3HT/n-GaAs Schottky Barrier Diode

Contact Info

Product

Resources

About