1992
DOI: 10.1149/1.2069135
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Electrical Characterization of Bonding Interfaces

Abstract: An overview is given on measurement techniques and results obtained for the characterization of bonded St-St, Si-SiO~, and SiO~-SiO2 interfaces. The electrical properties of St-St interfaces are similar to those of grain boundaries, which suggests a model where the current across the interface is limited by a potential barrier determined by charge .carriers captured into electron states at the bonded interface. From current-voltage and capacitance-voltage measurements, the interface charge and its energy distr… Show more

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Cited by 16 publications
(9 citation statements)
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“…Direct wafer bonding, in which two wafers are bonded to each other without adhesive or solder, has been widely applied for fabricating a variety of heterogeneous structures, such as Si/Si, 1 Si/SiO 2 , 2,3 GaAs/Si, 4 InP/Si, 5 GaAs/GaAs, 6 and GaAs/InP 7,8 because it enables us to form junctions of semiconductor materials with different crystal structures or lattice constants. In almost all direct bonding methods-hydrophilic, hydrophobic, plasma-assisted bonding, and others [9][10][11] -annealing after the bonding has been reported to be essential in achieving sufficient bonding strengths. [6][7][8]12 However, the fact that the need for annealing may limit the area of application of the direct wafer bonding, because the resultant thermal stress could cause the diffusion of doped impurities across the bonding interfaces.…”
Section: Introductionmentioning
confidence: 99%
“…Direct wafer bonding, in which two wafers are bonded to each other without adhesive or solder, has been widely applied for fabricating a variety of heterogeneous structures, such as Si/Si, 1 Si/SiO 2 , 2,3 GaAs/Si, 4 InP/Si, 5 GaAs/GaAs, 6 and GaAs/InP 7,8 because it enables us to form junctions of semiconductor materials with different crystal structures or lattice constants. In almost all direct bonding methods-hydrophilic, hydrophobic, plasma-assisted bonding, and others [9][10][11] -annealing after the bonding has been reported to be essential in achieving sufficient bonding strengths. [6][7][8]12 However, the fact that the need for annealing may limit the area of application of the direct wafer bonding, because the resultant thermal stress could cause the diffusion of doped impurities across the bonding interfaces.…”
Section: Introductionmentioning
confidence: 99%
“…[11][12][13]) with a more detailed explanation given in [14]. However, there is a good agreement that when the defect density threshold for amorphisation is calculated with a defect density model, the crystalline -amorphous transition occurs with a critical point defect density of 1.15 x 10 22 cm -3 [12,15].…”
Section: Design and Simulationmentioning
confidence: 58%
“…with a more detailed explanation given in [25]. However, there is a good agreement when the defect density threshold for amorphization is calculated with a defect density model, in that the crystalline -amorphous transition occurs with a critical point defect density of 1.15 x 10 22 cm −3 [23,26]. It is also clear from the results of [17], that Δn increases with an increase in dose with a maximum Δn of 0.585 demonstrated.…”
Section: Amorphization Conditionsmentioning
confidence: 65%