Electrical characterization of current conduction in Au/TiO2/n-Si at wide temperature range

High performance sol–gel spin-coated titanium dioxide dielectric based MOS structures

“…Thus, much of the research work is widespread on the application of thermodynamically metastable anatase phase. The deposition of titania by vacuum based processes are extensively investigated, but requires additional attention during the process [11][12][13][14]. Alternatively, solution based process is quite attractive, as titania can be obtained with high purity and chemical homogeneity [15].…”

Structural investigation and electronic band transitions of nanostructured TiO2 thin films

“…High purity (99.999%) Ti target was used to obtain TiO 2 film. Prior to the film deposition, Si substrate was sputter cleaned in pure argon ambient after raising the substrate temperature to 400 °C in 10 -8 mbar high vacuum in order to ensure the removal of any residual organics [20].…”

A comparative study on the electrical characteristics of Au/n-Si structures with anatase and rutile phase TiO2 interfacial insulator layer

“…Alternative high-k materials such as Si 3 N 4 , HfO 2 , ZnO, ZrO 2 TiO 2 , Al 2 O 3 for SiO 2 have recently attracted great attention for its application as an interfacial insulator layer at metal/semiconductor (M/S) interface in the semiconductor devices such as metalinsulator/oxide-semiconductor (MIS or MOS) [1][2][3][4][5][6][7][8][9][10][11][12][13]. SiO 2 has a poor interface due to high leakage current, high temperature dispersion and high defect trapped charges.…”

“…Therefore, the fundamental requirement is using high k-dielectrics materials. In addition to high dielectric constant and band offers, low density of interface states and low leakage current [6][7][8][9][10][11][12][13]. Among these high-k materials, bulk TiO 2 is a potential candidate because of having different phases with extraordinarily high dielectric constant.…”

“…There are lots of TiO 2 thin film growth techniques such as chemical vapor deposition [18], electron beam evaporation [19], thermal or anodic oxidation [8,20], sol-gel method [21,22], plasma-enhanced chemical vapor deposition [23], and DC reactive magnetron sputtering methods [24,25]. Among these methods, DC reactive magnetron sputtering method is much more preferable since it is easier to control and this method makes the fabrication of insulator films with reproducible and desired properties possible.…”