2015
DOI: 10.1016/j.mssp.2015.06.073
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High performance sol–gel spin-coated titanium dioxide dielectric based MOS structures

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Cited by 35 publications
(12 citation statements)
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References 36 publications
(42 reference statements)
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“…The effect of spin speed on photocatalytic activity thin films has extensively been reported in the literature, though different results were obtained [55,56]. Extensive investigations on the sol-gel spin coating of doped TiO 2 films on glass were reported [24,57]. The impact of viscosity on the photocatalytic activity of the films was also highlighted by Zabihi et al [38] and Pérez et al [69].…”
Section: Discussionmentioning
confidence: 97%
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“…The effect of spin speed on photocatalytic activity thin films has extensively been reported in the literature, though different results were obtained [55,56]. Extensive investigations on the sol-gel spin coating of doped TiO 2 films on glass were reported [24,57]. The impact of viscosity on the photocatalytic activity of the films was also highlighted by Zabihi et al [38] and Pérez et al [69].…”
Section: Discussionmentioning
confidence: 97%
“…Various authors endorsed that the immobilization of a catalyst on transparent supports such as glass using spin and spread coating was identified as an alternative cost-effective route for catalyst coating [55,56]. That is, a controllable affinity between catalyst and glass supports was observed even though the limitations of catalysts coated on the glass are still under investigation [24,57]. Nevertheless, the effect of common factors mainly the rotation speed, the sol-gel to solvent volume ratio, and the evaporation rate to some extent on the thickness of the fabricated films and TiO 2 content are still being investigated [58,59].…”
Section: Discussionmentioning
confidence: 99%
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“…The ALPO devices show a leakage current density of ∼4.5×10 −8 A.cm −2 only at -1 MV.cm −1 electric field. Such low leakage current not only meets the criteria for the application of high-performance flash memory devices, but also outperforms other solution processed inorganic dielectrics namely Al 2 O 3 [24], HfO 2 [25], ZrO 2 [26], and TiO 2 [27], which show typical leakage currents ∼10 −5 A.cm −2 , ∼10 −7 A.cm −2 , ∼10 −2 A.cm −2 and ∼10 −5 A.cm −2 respectively at 1 MV cm −1 . This observation for ALPO also ensures that high quality flash memory devices can be fabricated without the need of blocking or tunneling layers.…”
mentioning
confidence: 80%
“…Alternate high-k dielectrics such as TiO 2 , HfO 2 , ZrO 2 , etc. are excellent insulators for transistor applications [24][25][26][27], but do not have the intrinsic charge trapping properties as silicon nitride. Although solution processed HfO 2 has been used to fabricate SONOS type flash memory [1], the devices required the support of additional dielectric layers which were deposited by sophisticated ultrahigh vacuum techniques with high temperature processing steps to improve the memory leakage.…”
mentioning
confidence: 99%