Electrical characterization of DC sputtered ZnO/p-Si heterojunction

Ocak, Yusuf Selim

doi:10.1016/j.jallcom.2011.10.005

Cited by 55 publications

(22 citation statements)

References 35 publications

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“…Another parameter that affects the exponential part of I-V characteristics is the saturation current I 0 which gives the numbers of charges capable to overcome the energetic barrier in reverse bias voltage. According to the thermo-ionic emission mechanism, the current versus voltage depending on I 0 is expressed as follows [6], V is the applied voltage, R s is series resistance and I 0 is given by [11],…”

Section: The Schottky Diode Investigation Under Darkmentioning

confidence: 99%

“…Through the last decades, ZnO thin films and devices have been extensively investigated due to their potential applications in optoelectronic devices and photovoltaic cells.ZnO has attracted researchers in films and devices [1][2], it has intensively grown onto different substrates,like p-type silicon, InP, graphite, as thin films, Schottkybarrier diodes (SBD) and heterostructures (HS) [3][4][5].The ZnO devices based on ZnO have been fabricated by various methods like sputtering [6], spin coating and spray pyrolysis [7][8].The application of ZnO device are various, like gas sensors and solar cells [9][10].In the aim to prepare a photovoltaic device, we fabricate a Schottky diode based on a wide band gap semiconductor ZnO,Eg> 3 eV with a good rectifying behavior. The study's aim is to replace standard Schootky diode by those based on wide band gap oxide semiconductor.…”

Section: Introductionmentioning

confidence: 99%

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The photovoltaic properties of a good rectifying Al/n-ZnO/p-Si/AL Schottky diode used in solar cell

Benhaliliba¹

2017

J. Fundam and Appl Sci.

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Section: The Schottky Diode Investigation Under Darkmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The photovoltaic properties of a good rectifying Al/n-ZnO/p-Si/AL Schottky diode used in solar cell

Benhaliliba¹

2017

J. Fundam and Appl Sci.

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“…In simple Schottky barrier theory, the capacitance of the barrier can be expressed by Eq. (4) (when N D > > N A ) [39]:…”

Section: Capacitance-voltage Characteristicsmentioning

confidence: 99%

Structural and electrical characterizations of ZnO:In/PS/Si heterojunction deposited by rf-magnetron sputtering

et al. 2015

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Indium doped zinc oxide (IZO) thin film has been deposited on p-type porous silicon (PS) substrate by rf-magnetron sputtering of IZO aerogel nanoparticles at room temperature to obtain n-IZO/PS/p-Si heterojunction diode. The obtained IZO film, with a thickness of about 400 nm using indium concentration of 4 at.%, was polycrystalline with a hexagonal wurtzite structure and preferentially orientation in the (002) crystallographic direction. Atomic force microscopy (AFM) micrograph shows that IZO film has a typical columnar structure and a very smooth surface. The heterojunction parameters were evaluated from the current-voltage (I-V) characteristics carried out in the temperature range 80-300 K and capacitance-voltage (C-V) measurements. The ideality factor and barrier height of the heterojunction exhibited strong temperature dependence. The electrical measurements show that the n-IZO/PS/p-Si heterojunction has a Schottky electronic behavior where the depletion-layer is developed principally in the p-type silicon substrate. The tunneling mechanism via deep-level states was the main conduction process at low forward bias, while space-charge-limited current conduction dominated the carrier transport at higher bias. The I-V characteristics under illumination show that the p-n junction exhibits a photovoltaic behavior and is promising for photovoltaic application.

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“…ZnO/p-Si heteroeklemini oluşturmak için literatürde Sol-jel/ döndürme kaplama [13], kimyasal buhar biriktirme (CVD) [14], sputter [15] ve sprey kaplama [16] gibi farklı birçok yöntem kullanılmıştır. Bunlar arasında sol-jel/döndürme kaplama yöntemi düşük üretim maliyetli ve kolay bir üretim tekniği olarak öne çıkmaktadır.…”

Section: Introductionunclassified

“…Si için Fermi seviyesi de vakum seviyesinden 4.97eV aşağıda olduğundan beklenen Vbi değeri 0.72eV'tur. Ancak deneysel sonuçlarda daha yüksek değerler raporlanmıştır[15,24].DLTS sonuçları her iki örnek içinde derin tuzak seviyelerinin varlığını göstermektedir. ZnO/p-Si örneğinin DLTS sonuçlarından elde edilen derin tuzakların aktivasyon enerjisi değeri Ea=195meV olarak bulunmuştur.…”

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Electrical Characterization of ZnO (Al) / p-Si Heterojunctions Fabricated by SolGel Method

Akçay

2018

Süleyman Demirel Üniversitesi Fen Edebiyat Fakültesi Fen Dergisi

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Özet: Bu çalışmada, p-tipi Silisyum (p-Si) üzerine katkısız Çinko Oksit (ZnO) ve %2 Alüminyum katkılı çinko oksit (AZO) kaplanarak oluşturulan heteroeklemlerin elektriksel özellikleri incelenmiştir. ZnO ve AZO nanoparçacıklar Sol-Jel yöntemi ile sentezlenmiş ve ZnO/p-Si, AZO/p-Si heteroeklemleri döndürme kaplama tekniği ile oluşturulmuştur. Kaplama sonrası örneklere 450 o C'de 30 dk termal tavlama işlemi uygulanmıştır. 10K-300K aralığında alınan Akım-Voltaj (I-V) ve Kapasitans-Voltaj (C-V) ölçümleri örneklerin çok düşük sızıntı akımına sahip diyot davranışı sergilediğini göstermektedir. C-V ölçüm sonuçlarından diyotların kontak potansiyeli (built-in potential, Vbi) ve taşıyıcı konsantrasyonları (Nd) hesaplandı. Derin seviye geçiş spektroskopisi (DLTS) tekniği ile arınma bölgesi civarında bulunan tuzak seviyeleri araştırılmıştır. Her iki örnekte de elektron tuzaklarının varlığı tespit edilmiştir.Abstract: In this work, the electrical properties of heterojunctions formed by coating of undoped Zinc Oxide (ZnO) and 2% Aluminum doped zinc oxid (AZO) on p-type silicon (p-Si) were investigated. ZnO and AZO nanoparticles were synthesized by Sol-Gel method and ZnO / p-Si, ZnO (Al) / p-Si heterojunctions were formed by spin coating technique. After the coating, the samples were thermally annealed at 450 o C for 30 minutes. Current-Voltage (I-V) and Capacitance-Voltage (C-V) measurements taken at 10K-300K show that the samples exhibit diode behavior with very low leakage current. Built-in potential (Vbi) and carrier concentrations (Nd) of diodes were calculated from C-V measurement results. Deep level transition spectroscopy (DLTS) technique was used to investigate trap levels around the depletion region. The presence of electron traps in both samples was determined.

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Electrical characterization of DC sputtered ZnO/p-Si heterojunction

Cited by 55 publications

References 35 publications

The photovoltaic properties of a good rectifying Al/n-ZnO/p-Si/AL Schottky diode used in solar cell

The photovoltaic properties of a good rectifying Al/n-ZnO/p-Si/AL Schottky diode used in solar cell

Structural and electrical characterizations of ZnO:In/PS/Si heterojunction deposited by rf-magnetron sputtering

Electrical Characterization of ZnO (Al) / p-Si Heterojunctions Fabricated by SolGel Method

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