The photovoltaic properties of a good rectifying Al/n-ZnO/p-Si/AL Schottky diode used in solar cell

Abstract

The photovoltaic properties of a good rectifying Al/ZnO/pSi/Al Schottky diode are studied.

Organic–inorganic Au/PVP/ZnO/Si/Al semiconductor heterojunction characteristics

“…The high ideality factor leads to confirming the non-ideal behavior of such device, which is due to series resistance and interface layer. This detail is in good agreement with those cited by Aydin et al [7] . The R s and Φ b electron- ic parameters are determined using the function F(V), suggested by Norde, in terms of bias voltage and temperature as follows [11] ,…”

“…The insertion of ZnO layer inside the heterojunction diode may cause the increase of resistance which leads to the nonideal I-V behavior. Similar trend was mentioned earlier, the presence of an oxide film plus the organic PCBM layer at Au/4H-nSiC interface causes the non-ideal I-V behavior as reported by Aydin et al [7] . Consequently, it is noted that n exceeds the unity; this fact might be attributed to the native oxide layer and the chemical structures of organic film on the semiconductor.…”

“…Meanwhile, a series resistance of 1.9 kΩ and 238 Ω in MgPc/p-Si and MgPc/n-Si Schottky diodes are respectively found as reported by Missoum et al [16] . A barrier height of 1.10 V is obtained for the Ni/4H-nSiC/PCBM/Au organic diode as cited previously [7] . Additionally, the organic PCBM layer modifies the electronic properties of the 4H-nSiC diode inside the Ni/4H-nSiC/PCBM/Au diode as mentioned previously [7] .…”

“…where n represents the ideality factor which is greater than the unity, V is the bias voltage of HJ diode and I 0 is the saturation current expressed as [7] :…”

Illumination Dependent Electrical and Photovoltaic Properties of Au/n-Type Si Schottky Diode with Anthracene-Based NAMA Interlayer

“…2, the diode exhibited a good rectifying behavior under dark with rectifying ratio of 100 at ±2 V. Besides, there is a distinct difference for the logarithmic scale I-V curves of illumination and dark measurements due to the high value of electric field with illumination. 36 As can be seen, current values increase with increasing illumination intensity in the reverse bias region, indicating that the diode may also have photodiode characteristics.…”