Role of Reduced Graphene Oxide-Gold Nanoparticle Composites on Au/Au-RGO/p-Si/Al Structure Depending on Sample Temperature

Sağlam, M.; Güzeldir, B.; Türüt, A.; Ekinci, Duygu

doi:10.1007/s11664-021-09017-0

Cited by 9 publications

(3 citation statements)

References 65 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The fabricated diode is not ideal due to the n value is larger than 1, and this can be related to the barrier inhomogeneity at the interface, the image force effects, and thin interface layer. [26][27][28][29] When different thicknesses of interface layer are deposited between the rectifier metal and the semiconductor, as the interfacial layer thickness increases, the charge carriers are less likely to tunnel, resulting in a high barrier height. 30 The ideality factor and barrier height values of Schottky diodes with organic interfacial layer prepared by means of n-Si semiconductor in literature were introduced in Table II.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

Tuğluoğlu

Pakma²,

Akın³

et al. 2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

We report the results of temperature-dependent barrier properties of Au/NAMA/n-Si Schottky diode in the low temperature range of 80-330 K. The analysis results of thermionic emission theory showed that the barrier height decreases, and the ideality factor increases towards low temperatures, depend on the barrier height inhomogeneities. The obtained results show the presence of a double Gaussian distributions with standard deviations (σ_0) of 0.073 and 0.18 V and mean barrier height (Φ ̅_b0) values of 0.595 and 1.427 eV in the change of 80-140 and 160-330 K, respectively. Moreover, evaluation of the modified Richardson curve, the values of Richardson constant (A^*) of 321.805 and 110.935 A K-2 cm-2, and mean barrier height of 0.606 and 1.422 eV were found for the low- and high-temperature regions, respectively. The A^* value of 110.935 A K-2 cm-2 is close to the theoretical value of 112 A K-2 cm-2 for n-Si. These results proved that there is barrier inhomogeneity.

show abstract

Section: Resultsmentioning

confidence: 99%

“…To test the barrier homogeneity, many researchers have plotted the graph between barrier height and ideality factor. [26][27][28][29] The changes in both n and Φ b with temperature for Au/NAMA/n-Si Schottky diode are shown in Fig. 5.…”

Section: Resultsmentioning

confidence: 99%

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

Tuğluoğlu

Pakma²,

Akın³

et al. 2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Thus, the intensity ratio of the D and G bands of rGO (ID/IG=0.85), which indicates that hydroxyl, epoxy, and carboxyl of oxygen functional groups have been reduced from reduction process from GO to rGO via electrochemically deposition. Due to this process, it induced the defect in the structure as described in [31][29] [32].…”

Section: Results and Discussion 31 Characterization Of Rgo Filmmentioning

confidence: 99%

Enhancing Humidity Performance: Effect of Electrode Material on Electrochemical Reduced Graphene Oxide (ERGO) Humidity Sensor

Khairudin¹,

Ilias²,

Rani³

et al. 2022

IJIE

View full text Add to dashboard Cite

Reduced graphene oxide (rGO) possesses remnant oxygen functional groups, hydrophilic characteristics, and a large surface area, making it a one-of-a-kind material with unique qualities that are attributed to the reduction of graphene oxide (GO)process.There are numerous ways that can be utilized in the reduction process; however, it has not yet been completely examined which method is the most efficient in terms of reducing the oxygen-containing functional group from the GO. This is owing to the fact that a successful reduction technique has the potential to broaden the scope of rGO's applicability across a wide range of industrial sectors. This study entails an investigationthe effect of humidity performance on different metal materials such as Pt, Au, Ag, and Cu with fixedfingers spacing of 5um on the reduced graphene oxide (rGO) by electrochemical deposition (ECD) from GO aqueous dispersion. A combination of experimental measurements using humidity chamber, Raman spectroscopy, Electrochemical Impedance Spectroscopy, andScanning Electron Microscopyhave revealed the performance of rGO as the humidity sensor.According to the findings, a good humidity performance was displayed in rGO/Pt, as demonstrated by higher sensitivity and greater response towards humidity which is found to be around 10 times higher response than GO in Hummer’s method, as reported in the literature.These characteristics are both facilitated by the higher ionic conductivity of the material.

show abstract

Transfer of graphene thin film obtained by PECVD method to Au/p-Si rectifier junction as interfacial layer and analysis of its barrier characteristics depending on sample temperature

Özakın

Sağlam

Güzeldir

2022

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Role of Reduced Graphene Oxide-Gold Nanoparticle Composites on Au/Au-RGO/p-Si/Al Structure Depending on Sample Temperature

Cited by 9 publications

References 65 publications

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

Enhancing Humidity Performance: Effect of Electrode Material on Electrochemical Reduced Graphene Oxide (ERGO) Humidity Sensor

Transfer of graphene thin film obtained by PECVD method to Au/p-Si rectifier junction as interfacial layer and analysis of its barrier characteristics depending on sample temperature

Contact Info

Product

Resources

About