Transfer of graphene thin film obtained by PECVD method to Au/p-Si rectifier junction as interfacial layer and analysis of its barrier characteristics depending on sample temperature

Özakın, Oğuzhan; Sağlam, M.; Güzeldir, B.

doi:10.1007/s10854-022-08382-8

Cited by 3 publications

(1 citation statement)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Which includes RF magnetron sputtering [3], pulsed laser deposition [4], [5], spray pyrolysis [6], chemical bath deposition [7], electrodeposition [8], among others. While for high quality graphene thin films obtention, methods such as chemical vapor deposition [9], liquid phase exfoliation [10], and plasma chemical vapor deposition [11] are used. For graphene oxide thin film deposition is achieving by electrophoretic deposition (EPD) departing of aqueous dispersion of GO powders, which oxidation degree could be tune varying the EPD parameters.…”

Section: Introductionmentioning

confidence: 99%

Evolution of structural features in GO/CdS multilayer films for advanced optoelectronic devices

Tolentino-Hernandez,

Ovando-Rocha,

Ruiz-Perez

et al. 2024

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

In this work graphene oxide/cadmium sulphide [GO/CdS]n multilayer films were obtained onto FTO/SLG substrates by cyclic electrophoretic deposition (EPD) and successive ion layer adsorption and reaction (SILAR) methods, with 3, 5, 7 and 10 cycles. The optical characterization for 3 cycles sample exhibits an optical band gap of ∼2.9 eV due the nanocrystalline nature of CdS, from 5 to 10 cycles a blue shift is observed in the band gap around ∼2.15 eV by the electronic disorder induced by graphene oxide intercalation and the mixture of hexagonal/cubic phases of CdS. Raman spectra shows the longitudinal optical modes LO, 2LO and 3LO, the LO peak position shows a blue shift in comparison to the bulk CdS. The multilayer films of 3 and 5 cycles shows a wide range of photoluminescence emission from 350 to 700 eV, for samples of 7 and 10 cycles a quenching and red shift is observed attributed to the CdS crystals growth with a peak emission at 615 eV from bulk CdS, which make the materials suitable for photovoltaic solar cells and UV-Vis diodes for optoelectronic devices.

show abstract