Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al₂O₃ Gate Dielectric Fabricated on SiC Substrates

Abstract

Top-gated field-effect transistors have been created from bilayer epitaxial graphene samples that were grown on SiC substrates by a vacuum sublimation approach. A high-quality dielectric layer of Al2O3was grown by atomic layer deposition to function as the gate oxide, with an e-beam evaporated seed layer utilized to promote uniform growth of Al2O3over the graphene. Electrical characterization has been performed on these devices, and temperature-dependent measurements yielded a rise in the maximum transconductance and a significant shifting of the Dirac point as the operating temperature of the transistors was increased.