Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation

Войцеховский, А. В.; Nesmelov, S. N.; Dzyadukh, S. М.; Варавин, В. С.; Dvoretsky, S. A.; Михайлов, Н. Н.; Yakushev, M. V.; Sidorov, G. Yu.

doi:10.1016/j.vacuum.2018.09.054

Cited by 18 publications

(9 citation statements)

References 29 publications

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“…C-V characteristics recorded at different voltage sweep directions showed significant hysteresis. This could be associated with the presence of slow states at the interface between the film and Al 2 O 3 [25,26]. According to the results of the C-V measurements, in the as-grown film F2 the electron concentration in the sub-surface MCT layer equalled 4.6 × 10 15 cm −3 .…”

Section: (B)) the Low-defect Layermentioning

confidence: 93%

Electrical and microscopic characterization of p⁺-type layers formed in HgCdTe by arsenic implantation

Іжнін¹,

Mynbaev

Войцеховский

et al. 2020

Semicond. Sci. Technol.

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The Hall-effect (with mobility spectrum analysis) and capacitance measurements were combined with transmission electron microscopy for the study of molecular-beam epitaxy-grown n-type Hg1-xCdxTe (x = 0.22) films subjected to various operations used in the fabrication of p +-n photodiode structures. The operations included arsenic ion implantation, activation annealing and extra annealings aimed at investigation of the details of the p +-n junction formation. A detailed characterization of p+-type layers formed by the implantation was done. A high degree of arsenic activation by activation annealing was demonstrated, along with the annihilation of implantation-induced extended (dislocation loops) and quasi-point defects, and the disappearance of electrically active centres associated with them. The annealing was also shown to cause the activation of residual acceptors, changing the degree of electrical compensation in the n-‘base’ of some of the p +-n structures.

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Section: (B)) the Low-defect Layermentioning

confidence: 93%

Electrical and microscopic characterization of p⁺-type layers formed in HgCdTe by arsenic implantation

Іжнін¹,

Mynbaev

Войцеховский

et al. 2020

Semicond. Sci. Technol.

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“…It is necessary to optimize the growth rate and thickness of the Al 2 O 3 film deposited in one cycle [25,26]. The resulting Al 2 O 3 -HgCdTe interface grown at optimal substrate temperatures (120 °C) and times has a density of surface states at the level of 10 11 -10 12 cm −2 eV −1 [27][28][29][30]. There is evidence that the dielectric obtained in such a process is amorphous [20].…”

Section: Methodsmentioning

confidence: 99%

“…The current measurements were carried out in the temperature range of 9-300 K with the change in the bias voltage from −3 to 3 V. The error in measuring the current did not exceed 1 nA. The hysteresis, which is typical for MIS structures based on HgCdTe with a near-surface graded-gap layer [27], was small for the studied test structures, since the composition was uniformly distributed over the thickness of the contact layer. It can be seen from the figure 2(a) that in a wide temperature range at zero bias, the depletion mode is realized on the structure.…”

Section: Methodsmentioning

confidence: 99%

Diffusion-limited dark currents in mid-wave infrared HgCdTe-based nBn structures with Al₂O₃ passivation

Войцеховский

Nesmelov

Dzyadukh

et al. 2019

J. Phys. D: Appl. Phys.

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We present the results of the study of the dark current in the MWIR nBn structure based on n-Hg1−xCdxTe grown by molecular beam epitaxy on a GaAs (0 1 3) substrate. The CdTe content in the barrier layer is 0.84, and its thickness is 210 nm. To suppress the surface current, passivation with an Al2O3 layer formed by plasma-enhanced atomic layer deposition was used. The dark current density at the temperature of 184 K and the voltage bias of −1 V is 3.1 × 10−6 A cm−2. At temperatures higher than 180 K, the total current through the nBn structure is determined by the diffusion component. In the temperature range of 180–300 K, the dark current values correspond well to the empirical model of Rule 07. These values are comparable with the dark current values for modern mid-infrared barrier detectors based on MOCVD HgCdTe and III–V materials. The studied nBn structures have lower dark currents than the previously described analogues based on MBE HgCdTe, which may be associated with high-quality passivation of the side walls of the mesa structure.

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“…Johs et al designed and tested the SE settings that compensate for substrate wobble in the return path configuration, demonstrating great accuracy of the acquired SE data with this setting [139] . SE has been applied to trace in real time the growth front in the dynamic atomic layer epitaxy (D-ALEp), a proposed and developed epitaxial process to grow coherent monolayer-InN on/in GaN-matrix [140] . During predeposition heat treatment of the CdTe for the growth of CdHgTe/CdTe/ZnTe/Si (310), Marin et al proposed an effective approach via SE for calibrating growth temperatures by establishing a linear dependence of several critical points of the measured spectra for the optical constants with temperature [18] .…”

Section: Spectroscopic Ellipsometry (Se)mentioning

confidence: 99%

Development of in situ characterization techniques in molecular beam epitaxy

Shen,

Zhan,

et al. 2024

J. Semicond.

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Ex situ characterization techniques in molecular beam epitaxy (MBE) have inherent limitations, such as being prone to sample contamination and unstable surfaces during sample transfer from the MBE chamber. In recent years, the need for improved accuracy and reliability in measurement has driven the increasing adoption of in situ characterization techniques. These techniques, such as reflection high-energy electron diffraction, scanning tunneling microscopy, and X-ray photoelectron spectroscopy, allow direct observation of film growth processes in real time without exposing the sample to air, hence offering insights into the growth mechanisms of epitaxial films with controlled properties. By combining multiple in situ characterization techniques with MBE, researchers can better understand film growth processes, realizing novel materials with customized properties and extensive applications. This review aims to overview the benefits and achievements of in situ characterization techniques in MBE and their applications for material science research. In addition, through further analysis of these techniques regarding their challenges and potential solutions, particularly highlighting the assistance of machine learning to correlate in situ characterization with other material information, we hope to provide a guideline for future efforts in the development of novel monitoring and control schemes for MBE growth processes with improved material properties.

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Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation

Cited by 18 publications

References 29 publications

Electrical and microscopic characterization of p⁺-type layers formed in HgCdTe by arsenic implantation

Electrical and microscopic characterization of p⁺-type layers formed in HgCdTe by arsenic implantation

Diffusion-limited dark currents in mid-wave infrared HgCdTe-based nBn structures with Al₂O₃ passivation

Development of in situ characterization techniques in molecular beam epitaxy

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Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation

Cited by 18 publications

References 29 publications

Electrical and microscopic characterization of p+-type layers formed in HgCdTe by arsenic implantation

Electrical and microscopic characterization of p+-type layers formed in HgCdTe by arsenic implantation

Diffusion-limited dark currents in mid-wave infrared HgCdTe-based nBn structures with Al2O3 passivation

Development of in situ characterization techniques in molecular beam epitaxy

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Product

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Electrical and microscopic characterization of p⁺-type layers formed in HgCdTe by arsenic implantation

Electrical and microscopic characterization of p⁺-type layers formed in HgCdTe by arsenic implantation

Diffusion-limited dark currents in mid-wave infrared HgCdTe-based nBn structures with Al₂O₃ passivation