Electrical characterization of ITO/CuPc/Al diodes using temperature dependent capacitance spectroscopy and I–V measurements

Reis, Françoise T.; Mencaraglia, Denis; Saad, S. Ould; Séguy, Isabelle; Oukachmih, Mimoun; Jolinat, Pascale; Destruel, P.

doi:10.1016/j.jnoncrysol.2004.03.050

Cited by 18 publications

(12 citation statements)

References 8 publications

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“…At larger V, J increased linearly for both devices. The obtained forward J values ͑Ͼ1500 mA/ cm 2 at V =1 V͒ are six orders of magnitude larger than those of conventional ITO/NPB/Al and ITO/ CuPc/Al hole-only devices 7,25 and an order of magnitude larger than that of a LaCuOSe:Mg/NPB/Al hole-only device. 16 Because the J-V curves show linear behaviors above V th , they are not controlled by the Schottky injection, which follows the ln J-V 1/2 relation.…”

Section: Surface Modificationmentioning

confidence: 78%

Characterization of copper selenide thin film hole-injection layers deposited at room temperature for use with p-type organic semiconductors

Hiramatsu

Koizumi

Kim

et al. 2008

Journal of Applied Physics

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Copper selenide, CuxSe(x∼2), was examined as a hole-injection layer for low-temperature organic devices. Crystalline CuxSe films grown at room temperature with atomically flat surfaces exhibited metallic conduction with a high electrical conductivity of 4.5×103 S/cm, a hole concentration of 1.4×1022 cm−3, and a mobility of 2.0 cm2/(V s). Analysis of the free carrier absorption using the Drude model estimated the effective mass of a hole as 1.0me. Photoemission spectroscopy measurements of the interfaces between CuxSe and organic hole transport layers, N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl) benzidine (NPB) and copper phthalocyanine (CuPc), verified that the hole-injection barriers of these interfaces (0.4 eV for NPB and 0.3 eV for CuPc) are smaller than that of a conventional indium tin oxide (ITO) hole-injection electrode/NPB interface (0.6 eV) but are comparable to that of an ITO electrode/CuPc interface (0.3 eV). Hole-only devices using the CuxSe layer as a hole-injection anode exhibited very low threshold voltages (0.4–0.5 V) and nearly Ohmic characteristics. The NPB layer on the CuxSe layer was found to be highly doped at 1017–1019 cm−3, probably due to copper diffusion, while the CuPc layer is nearly intrinsic with a doping concentration lower than 1015 cm−3. These results indicated that a CuxSe film combined with CuPc is a promising candidate for a low-voltage hole-injection anode or a buffer layer in low-temperature devices such as organic light-emitting diodes and thin film transistors.

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Section: Surface Modificationmentioning

confidence: 78%

Characterization of copper selenide thin film hole-injection layers deposited at room temperature for use with p-type organic semiconductors

Hiramatsu

Koizumi

Kim

et al. 2008

Journal of Applied Physics

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“…Since Er 3+ exhibits an acceptor-like nature in this material [10], the doping of tin dioxide with this rare-earth ion leads to a high degree of compensation. Identification of transport mechanisms above room temperature is rather difficult since different processes may show similar electrical field dependence or may be superimposed [11]. Non-ohmic properties of SnO 2 based systems allow their utilization as varistors [12].…”

Section: Introductionmentioning

confidence: 99%

Poole–Frenkel effect in Er doped SnO₂ thin films deposited by sol‐gel‐dip‐coating

Morais

Scalvi

Ribeiro

et al. 2005

Physica Status Solidi (a)

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Electrical properties of Er-doped SnO 2 thin films obtained by sol-gel-dip-coating technique were measured. When compared to undoped tin dioxide, rare-earth doped films present much higher resistivity, indicating that Er 3+ presents an acceptor-like character into the matrix, which leads to a high degree of electric charge compensation. Current -voltage characteristics, measured above room temperature for Er-doped films, lead to non-linear behavior and two conduction regimes. In the lower electric field range the conduction is dominated by Schottky emission over the grain boundary potential barrier, which presents an average value of 0.85 eV. Increasing the applied bias, a second regime of conduction is observed, since the Poole -Frenkel coulombic barrier lowering becomes a significant effect. The obtained activation energy for ionization is 0.67 eV.

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“…Therefore the photoactive region is very thin (near the rectifying contact) and, since both positive and negative photoexcited charges travel through the same material, recombination losses are high. Such cells have small efficiency and are used only to study specific device properties such as current densities regimes through I-V characteristics [27][28][29] . -Bi-layers cells: different benefits can be expected from these structures.…”

Section: Vi2 New Solar Cell Concepts and Organic Light Emitting Diomentioning

confidence: 99%

“…It has been shown that presence of the C 60 layer increased more than 20 fold the photocurrent. Different polymers have been used since this first report 28 .…”

Section: The Concept Of Bi-layer Heterojunctionsmentioning

confidence: 99%

“…This model corresponds to simple Schottky contact, in the case of p-n junction, typical values (ε, Na, Nd…) of both materials should be introduced… In fact these models used in inorganic materials appears very simple and often more sophisticated techniques of capacitance measurements and corresponding theoretical model are necessary 131 . In order to conclude this part some typical example are presented in figure 19 (I-V).…”

Section: Ix14 Capacitance Measurementsmentioning

confidence: 99%

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Organic Photovoltaic Cells: History, Principle and Techniques

Bérnède

2008

J. Chil. Chem. Soc.

147

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In this review we present an overview of the different organic solar cells families. After recalling shortly the specificities of organic materials, the band structure, the electronic properties and the charge separation process in organic materials are shortly described. Then the new organic solar cell concepts are presented. Plastic organic solar cells consist either of two organic layers or a homogeneous mixture of two organic materials. One of them -either an organic dye or a semiconducting polymer -donates the electrons. The other component serves as the electron acceptor. Principles of these multi-layers and bulk heterojunctions are presented and discussed. Then some typical examples are presented, showing the fast evolution of the cells performances. Finally, a specific attention is devoted to the interfaces electrodes/organics. Indeed recent results show that, at least in the case of multi-layers cells, the introduction of thin buffer layers at the interfaces cathode/organic acceptor and/or anode/organic donor, can strongly improve the efficiency of the organic solar cells. About the interface organic acceptor/cathode, we report the influence of an exciton-blocking layer and/or an Al 2 O 3 thin layer on the efficiency of CuPc/C 60 based photovoltaic cells. The presence, or not, of a thin Al 2 O 3 layer depends on the encapsulating process of the devices. In the case of glass/ITO/CuPc/C 60 /Al cells, the presence of an Al 2 O 3 thin layer at the interface "organic acceptor/aluminium" increases strongly the open circuit voltage of the cells but decreases slightly their short circuit current and fill factor. In the case of glass/ITO/CuPc/C 60 /Alq 3 /Al cells, the open circuit voltage is systematically higher than without Alq 3 . However, in that case, the presence of Al 2 O 3 does not improve significantly the cell performances. All these results are discussed in terms of series and shunt resistance values related to possible oxygen contamination and organic covalent action with the Al films. The effectiveness of these different phenomena depends on the presence, or not, of Alq 3 and/or Al 2 O 3 layers.About the interface anode/organic donor, it is shown that an ultra thin metallic film improves significantly the short circuit current and the cell performances. The anode in plastic solar cells, which is a transparent conductive oxide (TCO), is usually an indium tin oxide film (ITO). Indeed, when a ZnO anode is used, cells performances are far from those achieved with ITO. However, strong improvement of the cells efficiency is encountered when an ultra thin buffer layer is introduced between the ZnO and the organic film. The presence of this ultra thin buffer layer at the surface of the TCO allows decreasing the performance difference between the cells using ITO and those using ZnO. More generally such ultra thin buffer layer improves the solar cells performances.

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Electrical characterization of ITO/CuPc/Al diodes using temperature dependent capacitance spectroscopy and I–V measurements

Cited by 18 publications

References 8 publications

Characterization of copper selenide thin film hole-injection layers deposited at room temperature for use with p-type organic semiconductors

Characterization of copper selenide thin film hole-injection layers deposited at room temperature for use with p-type organic semiconductors

Poole–Frenkel effect in Er doped SnO₂ thin films deposited by sol‐gel‐dip‐coating

Organic Photovoltaic Cells: History, Principle and Techniques

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Electrical characterization of ITO/CuPc/Al diodes using temperature dependent capacitance spectroscopy and I–V measurements

Cited by 18 publications

References 8 publications

Characterization of copper selenide thin film hole-injection layers deposited at room temperature for use with p-type organic semiconductors

Characterization of copper selenide thin film hole-injection layers deposited at room temperature for use with p-type organic semiconductors

Poole–Frenkel effect in Er doped SnO2 thin films deposited by sol‐gel‐dip‐coating

Organic Photovoltaic Cells: History, Principle and Techniques

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Poole–Frenkel effect in Er doped SnO₂ thin films deposited by sol‐gel‐dip‐coating