Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1

Abstract

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Longitudinal spin-relaxation of donor-bound electrons in direct bandgap semiconductors

“…Sample Ne (cm −3 ) (µm) Growth Method InP-1 [21] 5.6 ×10 13 5.1 MOCVD InP-2 [21] 2.3 ×10 14 7.4 MOCVD InP-3 [21] 1.8 ×10 15 4.2 MOCVD GaAs-1 [22] 3×10 13 15 MBE GaAs-2 5×10 13 10 MBE CdTe-1 [23] 1 × 10 14 >1000 Bridgman CdTe-2 [24] > 10 14 >1000 Bridgman electric electron-phonon interaction, can account for the magnitude of the observed relaxation in GaAs and CdTe.…”

Solid source MBE growth of InAsP/InP quantum wells

“…5,6 Despite its importance for optical and electrical devices, there has been relatively little investigation of the growth kinetics of InAsP 7,8 particularly when grown using solid source molecular beam epitaxy (SSMBE). To the best of the author's knowledge, several researchers have compared the use of As 2 and As 4 on the growth of GaAs, 10 AlGaAs, 11 , InGaAs, 12 and InGaAsP, 13 but not for InAsP. To the best of the author's knowledge, several researchers have compared the use of As 2 and As 4 on the growth of GaAs, 10 AlGaAs, 11 , InGaAs, 12 and InGaAsP, 13 but not for InAsP.…”