J. Electron. Mater.
 1999
DOI: 10.1007/s11664-999-0199-3
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Solid source MBE growth of InAsP/InP quantum wells

Georgiana Dagnall
1
,
Jeng-Jung Shen
2
,
Tong-Ho Kim
3
et al.
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Cited by 5 publications
(1 citation statement)
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“…15 However, this material system has not received much attention for 1.55 lm wavelength-scale lasers. We proceed to characterize our best performing device using Design B to provide more insight into device performance and material properties.…”
mentioning
confidence: 99%

Room temperature, continuous-wave coupled-cavity InAsP/InP photonic crystal laser with enhanced far-field emission directionality

Huang
1
,
Kim
2
,
Gardner
3
et al. 2011
Applied Physics Letters
21
0
11
0
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“…15 However, this material system has not received much attention for 1.55 lm wavelength-scale lasers. We proceed to characterize our best performing device using Design B to provide more insight into device performance and material properties.…”
mentioning
confidence: 99%

Room temperature, continuous-wave coupled-cavity InAsP/InP photonic crystal laser with enhanced far-field emission directionality

Huang
1
,
Kim
2
,
Gardner
3
et al. 2011
Applied Physics Letters
21
0
11
0
View full textAdd to dashboardCite
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Arsenic incorporation in InAsP/InP quantum wells

Dagnall
1
,
Brown
2
,
Stock
3
1999
J. Electron. Mater.
5
0
1
0
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InAsyP1−y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4

Hao
1
,
Ren
2
,
Xiong
3
et al. 2002
Journal of Crystal Growth
3
0
1
0
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