Electrical characterization of Ni/n-ZnO/p-Si/Al heterostructure fabricated by pulsed laser deposition technique

Chand, Subhash; Kumar, Rajender

doi:10.1016/j.jallcom.2014.06.042

Cited by 21 publications

(6 citation statements)

References 34 publications

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“…Considering the big challenge of stable and effective p-type doping for ZnO [ 36 , 37 , 38 ], we turned to Si for a p-type material, owing to the compatibility to the highly developed CMOS technology and the availability of a high-quality Si wafer. Although the p-Si/n-ZnO heterostructure may be exhaustively investigated [ 39 , 40 , 41 , 42 , 43 ], few works have been published up to date that demonstrate the impact of ionization multiplication base on this structure. The quality of the ZnO layer and the interface between Si and ZnO are the primary constraints.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode

Zhao

Jia

et al. 2020

Micromachines

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The avalanche photodiode is a highly sensitive photon detector with wide applications in optical communication and single photon detection. ZnO is a promising wide band gap material to realize a UV avalanche photodiode (APD). However, the lack of p-type doping, the strong self-compensation effect, and the scarcity of data on the ionization coefficients restrain the development and application of ZnO APD. Furthermore, ZnO APD has been seldom reported before. In this work, we employed a p-Si/i-ZnO/n-AZO structure to successfully realize electron avalanche multiplication. Based on this structure, we investigated the band structure, field profile, Current–Voltage (I-V) characteristics, and avalanche gain. To examine the influence of the width of the i-ZnO layer on the performance, we changed the i-ZnO layer thickness to 250, 500, and 750 nm. The measured breakdown voltages agree well with the corresponding threshold electric field strengths that we calculated. The agreement between the experimental data and calculated results supports our analysis. Finally, we provide data on the impact ionization coefficients of electrons for ZnO along the (001) direction, which is of great significance in designing high-performance low excess noise ZnO APD. Our work lays a foundation to realize a high-performance ZnO-based avalanche device.

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Section: Introductionmentioning

confidence: 99%

Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode

Zhao

Jia

et al. 2020

Micromachines

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“…Zinc oxide (ZnO) is considered a suitable material for solar blind UV photodetection applications because of its wide and direct bandgap (3.37 eV at room temperature) and semiconducting nature [1][2][3][4]. However the development of n-ZnO/p-ZnO homojunction structures has been hindered mainly by the difficulty in growing stable and reliable p-type ZnO films [5,6].…”

Section: Introductionmentioning

confidence: 99%

Effect of growth temperature on diode parameters of n-ZnO/p-Si heterojuction diodes grown by atomic layer deposition

Sahu

Misra

Ajimsha

et al. 2016

Materials Science in Semiconductor Processing

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“…The reverse saturation current can be obtained by extrapolating the linear region of the lnI versus V plot, which intercepts the lnI axis, and the ideality factor can be extracted from the inverse slope of the lnI versus V plot. [28][29][30] The reverse saturation current decreases with increasing oxygen ambient pressure during the growth. The lowest value of the reverse saturation current is found to be %19.6 nA for the diode grown at 1.0 Â 10 À2 mbar, which is lowest reported value in any n-Mg x Zn 1Àx O/p-Si heterojunction diode, to the best of our knowledge.…”

Section: Resultsmentioning

confidence: 99%

Enhancing the Diode Characteristics of Pulsed Laser–Deposited n‐Mg_xZn_1−xO/p‐Si Heterojunction: Role of Oxygen Ambient Pressure

Chetia

Das

Ajimsha

et al. 2020

Physica Status Solidi (a)

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Herein, diode characteristics of n‐MgxZn1−xO/p‐Si heterojunctions grown by pulsed laser deposition at different oxygen ambient pressures are investigated. It is found that the heterojunctions grown at lower oxygen growth pressure of 1.0 × 10−2 mbar and below do not show rectifying diode‐like behavior, whereas those grown at higher oxygen pressures at and above 2.5 × 10−2 mbar exhibit perfect diode‐like rectifying characteristics. The diode characteristics are found to improve significantly with increasing oxygen ambient pressure during the growth of MgxZn1−xO film. The current–voltage measurements show that the n‐MgxZn1−xO/p‐Si heterojunction diode grown at a higher oxygen ambient pressure of ≈1.0 × 10−1 mbar has the lowest reverse saturation current of ≈19 nA and highest rectification ratio of ≈1.4 × 104. The capacitance–voltage measurements reveal that the depletion layer width of heterojunction diodes increases manifold with increasing oxygen ambient pressure during the growth of MgxZn1−xO, which is understood in terms of decrease in carrier concentrations in the MgxZn1−xO thin films grown at higher oxygen ambient pressures. The n‐MgxZn1−xO/p‐Si heterojunction diodes, grown at high oxygen ambient pressures, with low reverse saturation current, high rectification ratio, and large depletion width may have potential application in wide‐bandgap nanoelectronic devices and UV enhanced photodetectors.

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Electrical characterization of Ni/n-ZnO/p-Si/Al heterostructure fabricated by pulsed laser deposition technique

Cited by 21 publications

References 34 publications

Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode

Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode

Effect of growth temperature on diode parameters of n-ZnO/p-Si heterojuction diodes grown by atomic layer deposition

Enhancing the Diode Characteristics of Pulsed Laser–Deposited n‐Mg_xZn_1−xO/p‐Si Heterojunction: Role of Oxygen Ambient Pressure

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Electrical characterization of Ni/n-ZnO/p-Si/Al heterostructure fabricated by pulsed laser deposition technique

Cited by 21 publications

References 34 publications

Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode

Characterization of Impact Ionization Coefficient of ZnO Based on a p-Si/i-ZnO/n-AZO Avalanche Photodiode

Effect of growth temperature on diode parameters of n-ZnO/p-Si heterojuction diodes grown by atomic layer deposition

Enhancing the Diode Characteristics of Pulsed Laser–Deposited n‐MgxZn1−xO/p‐Si Heterojunction: Role of Oxygen Ambient Pressure

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Enhancing the Diode Characteristics of Pulsed Laser–Deposited n‐Mg_xZn_1−xO/p‐Si Heterojunction: Role of Oxygen Ambient Pressure