Electrical characterization of the organic semiconductor Ag/CuPc/Au Schottky diode

Abstract

This paper reports on the fabrication and investigation of a surface-type organic semiconductor copper phthalocyanine (CuPc) based diode. A thin film of CuPc of thickness 100 nm was thermally sublimed onto a glass substrate with preliminary deposited metallic electrodes to form a surface-type Ag/CuPc/Au Schottky diode. The current-voltage characteristics were measured at room temperature under dark conditions. The barrier height was calculated as 1.05 eV. The values of mobility and conductivity was found to be 1:74 10 9 cm 2 =.V s/ and 5:5 10 6 1 cm 1 , respectively. At low voltages the device showed ohmic conduction and the space charge limited current conduction mechanisms were dominated at higher voltages.

Direct x-ray detection using thin-film pentacene Schottky diodes

“…The dark current in forward bias was much higher than the dark current in reverse bias which reveals that the current conduction was dominant in one direction. The rectification factor [58] which is the ratio of forward to reverse current at particular voltage was found to be 209 at 4 V/−4 V and was gradually diminishing to 98 at 3 V/−3 V, 43 at 2 V/−2 V, 1.15 at 1 V/−1 V. The measured dark current was of the order of 10 −10 A up to −4 V reverse voltage. Noticeable increase in the x-ray photoresponse was observed in reverse bias whereas in the forward bias both dark and photocurrents were found overlapping.…”

Effect of single walled carbon nanotubes on series resistance of Rose Bengal and Methyl Red dye-based organic photovoltaic device

“…Such a change in energy level leads to a non ideal current-voltage behavior of the device. Basically the energy difference of the organic semiconductor and work function of the metal are realigned for interaction between conductor and semiconductor, which in turn changes the electron affinity of the semiconductor at the organic/inorganic semiconductor interface, and this results an increment of barrier height [20] . To realise the role of R s , an equivalent circuit model of a standard photovoltaic device may be recollected.…”

Manufacturing technology of photovoltaic devices based on layered compositions and their properties

“…The numerical value of this index indicates the presence of band gap traps, which depends on the sample temperature and the bias direction. The current density in this region is described by the relation [12,13]: Where ε and μ are the electrical permittivity and mobility of charge carriers of zinc phthalocyanine, and θ is the ratio of free charges to trapped charges and is described by the expression:…”