Electrical characterization of the polyaniline/p-silicon and polyaniline titanium dioxide tetradecyltrimethylammonium bromide /p-silicon heterojunctions

Boyarbay, B.; Çetin, H.; Uygun, Ayşegül; Ayyıldız, E.

doi:10.1016/j.tsf.2009.07.140

Cited by 17 publications

(5 citation statements)

References 56 publications

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“…This behavior is possibly due to the barrier inhomogeneity and other effects such as inhomogeneities of thickness and nonuniformity of the interfacial charges. 36 This increase of / Bo and decrease of n with increasing temperature was also observed and explained by Boyarbay et al 37 in polyaniline/p-silicon heterojunctions. [38][39][40] The behavior can be explained on the basis of current transport across the metal-semiconductor interface.…”

Section: B Device Characterizationsupporting

confidence: 74%

Investigation of deep-level defects in conductive polymer on n-type 4H- and 6H-silicon carbide substrates using I-V and deep level transient spectroscopy techniques

Felix

Aziz

Cunha

et al. 2012

Journal of Applied Physics

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The current-voltage (I–V) characteristics of Au/sulfonated polyaniline (SPAN)/n-SiC heterojunctions have been investigated in detail over a wide range of temperatures between 20 and 440 K. The measured I–V characteristics of all devices show a good rectification behavior at all temperatures. The room temperature rectification ratios (forward to reverse currents ratio, IF/IR) at 0.6 V for SPAN/n-type 4H-SiC and SPAN/n-type 6H-SiC heterojunctions are 2 × 104 and 7 × 106, respectively. The value of rectification of SPAN/6H-SiC heterojunction is four orders of magnitutude higher than the state-of-the art sulfonated polyaniline thin films deposited on n-type silicon substrates. A self-assembly technique and copolymerization were used to fabricate a self-doped polyaniline films on SiC substrates. The experimental I–V data were analysed using the Werner model, which includes the series resistance of the heterojunctions. The diode parameters such as the ideality factor and the barrier height are determined from the experimental data using I–V analysis method. The effect of the temperature on these parameters is presented. Deep level transient spectroscopy (DLTS) and Laplace DLTS techniques were used to investigate the electrically active defects present in these heterostructure devices.

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Section: B Device Characterizationsupporting

confidence: 74%

Investigation of deep-level defects in conductive polymer on n-type 4H- and 6H-silicon carbide substrates using I-V and deep level transient spectroscopy techniques

Felix

Aziz

Cunha

et al. 2012

Journal of Applied Physics

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“…In other words the increase of the value of n with decrease of temperature is direct result of the bias dependence of the mean barrier and the standard deviation of the Gaussian distribution of barrier heights in Schottky diodes. The Gaussian distribution of the barrier heights and variation of the ideality factor with temperature are expressed by the following equations [41,42]. It is important to point out that the value of is not small compared to value for all the three samples, confirming the presence of the interface inhomogeneties [42].…”

Section: Current-voltage Characteristicsmentioning

confidence: 78%

“…The barrier height can also be determined by rewriting equation (3) The decrease in the ideality factor and the increase in barrier height with the increase of temperature can also be explained on the basis of a thermionic mechanism with Gaussian distribution of barrier heights due to the barrier height inhomogeneities prevailing at organic/inorganic semiconductor interface [41]. In other words the increase of the value of n with decrease of temperature is direct result of the bias dependence of the mean barrier and the standard deviation of the Gaussian distribution of barrier heights in Schottky diodes.…”

Section: Current-voltage Characteristicsmentioning

confidence: 99%

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Jameel

Aziz

Felix

et al. 2016

Applied Surface Science

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This article reports the effect of n-type GaAs substrate orientation, namely (100), IntroductionEssentially conducting polymers, such as polyaniline (PANI), sulfonated polyaniline (SPAN), poly(p-phenylene-vinylene), polypyrrole, polyacetylene, polythiophene, etc., are promising semiconductors materials with confirmed technological potential due to their unique optical and electrical properties [1]. Among the family of organic semiconductors, the semiconducting polymers have attracted the most attention for applications in electronic and optoelectronic devices, particularly due to their exceptional electrical properties and easy synthesis [2][3][4]. As a result, this category of polymers has been used in several applications such as organic light emitting diodes (OLEDs) [5,6], solar cells [7,8] As it is well known, the crystallographic orientation of the substrate has a significant effect on incorporation of impurities and defects and consequently on optical and electronic properties of III-V materials [28]. The ideality factor n and barrier height (BH) as well as the electrical characteristics are fundamental parameters of a Schottky barrier diode (SBD) and these give an indication about the quality of the Schottky interface. The SBD parameters must be determined over a broad range of temperatures because the analysis of the current-voltage (I-V) characteristics of the SBD measured only at room temperature does not provide accurate information about the conduction mechanism and the barrier nature created at metal semiconductor interface in order to understand these phenomena and determine precisely the parameters of the Schottky diodes. Chand et al. [29] and Hardikar et al.[30] analysed the experimental currentvoltage data which revealed that there is an increase in the ideality factor and a decrease in the zero-bias barrier height with decreasing temperature. Consequently, the ideality factor and the barrier height established from forward I-V characteristics are found to be temperature dependent. This confirms that the Schottky barrier height is inhomogeneous in nature at the interface. This behaviour has been successfully described on the basis of the thermionic emission mechanism with Gaussian distribution of the barrier heightTo fabricate a hybrid organic/inorganic semiconductor heterojunction device with the aim to obtain specific optical and electrical properties on the bases of their doping levels, a thin organic film is deposited onto the surface of a conventional inorganic semiconductor substrate. This can be done by simple and inexpensive methods such as 4 spin coating used for thin film deposition at room temperature. Recently, a new technique of SPAN films preparation has been developed by Yang et al. [32].In this paper, we report on the fabrication and electrical characterization of Au/SPAN/GaAs heterojunctions grown on three different substrate orientations, namely n-type GaAs (100), (311)A and (311)B. We have investigated the effect of the substrate orientation on the heterojunction parameters ...

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“…High frequency (1MHz) is used to investigate the device capacitance, because the data obtained from the C-V measurement in the low frequencies range represents the sum of the space charge capacitance and the interface capacitance. As the frequency increases, the interface capacitance contribution to the device capacitance decreases [21]. Fig.…”

Section: Capacitance-voltage Characteristicsmentioning

confidence: 95%

Electrical and photovoltaic properties of CuTPP/p-Si organicinorganic hybrid hetrojunction

El-Nahass¹,

Metwally²,

Farag³

et al. 2014

IOSRJAP

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Electrical characterization of the polyaniline/p-silicon and polyaniline titanium dioxide tetradecyltrimethylammonium bromide /p-silicon heterojunctions

Cited by 17 publications

References 56 publications

Investigation of deep-level defects in conductive polymer on n-type 4H- and 6H-silicon carbide substrates using I-V and deep level transient spectroscopy techniques

Investigation of deep-level defects in conductive polymer on n-type 4H- and 6H-silicon carbide substrates using I-V and deep level transient spectroscopy techniques

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Electrical and photovoltaic properties of CuTPP/p-Si organicinorganic hybrid hetrojunction

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