Electrical Characterization of the Self-Heating Effect in Oxide Semiconductor Thin-Film Transistors Using Pulse-Based Measurements

Nguyen, Manh-Cuong; On, Nuri; Ji, Hyung-Min; Nguyen, An Hoang-Thuy; Choi, Seung-Ho; Cheon, Jonggyu; Yu, Kun-Ming; Cho, Seong‐Yong; Kim, Jin-Hyun; Kim, Sang Woo; Jeong, Jooyeon; Choi, Rino

doi:10.1109/ted.2018.2826072

Cited by 14 publications

(9 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From the results, we suggest that the DC operation or large duty cycles under high density of current would limit device performance, while short duty cycle pulse mode can favor the heat dissipation and prevent device from overheating. [ 70 ]…”

Section: Resultsmentioning

confidence: 99%

Ultrahigh On‐Current Density of Organic Field‐Effect Transistors Facilitated by Molecular Monolayer Crystals

Peng

Chen

et al. 2022

Adv Funct Materials

View full text Add to dashboard Cite

Organic semiconductor materials are not recognized as a system for high current density applications due to the generally low mobility and high contact resistance. In this work, solution-processed organic molecular monolayer crystals (1L-crystals) as the active layers in field-effect transistors, demonstrating high current density application are utilized. The 1L-crystal-based devices exhibit high intrinsic mobility of 10.9 cm 2 V -1 s -1 and a contact resistance as low as 28 Ω cm, offering unprecedently high width-normalized current density up to 19 µA µm -1 and 1.2 MA cm -2 normalized by cross-section area. Joule heating effects in these high current devices are investigated. At a current density of 7 µA µm -1 , 1L-crystal-based transistor works stably within 1000 consecutive scans. Above this current density, thermal degradation in the current starts to occur and pulsed mode operation can restrict the degradation. The 1L-crystals exhibit superiority in high-current and potential high-frequency applications, which can expand the current boundary of organic semiconductor materials.

show abstract

Section: Resultsmentioning

confidence: 99%

Ultrahigh On‐Current Density of Organic Field‐Effect Transistors Facilitated by Molecular Monolayer Crystals

Peng

Chen

et al. 2022

Adv Funct Materials

View full text Add to dashboard Cite

show abstract

“…[11,12] Therefore, understanding and developing approaches to suppress the self-heating effect have highly im-portant research and application significance, which is worthy of further investigation. [14,15] In this work, reliability behaviors of α-IGZO TFTs have been studied by using specially designed pulsed currentvoltage analysis. Transfer characteristics are measured to verify the self-heating effect in the fabricated α-IGZO TFTs.…”

Section: Introductionmentioning

confidence: 99%

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Zhang

et al. 2019

Chinese Phys. B

View full text Add to dashboard Cite

Self-heating effect in amorphous InGaZnO thin-film transistors remains a critical issue that degrades device performance and stability, hindering their wider applications. In this work, pulsed current-voltage analysis has been applied to explore the physics origin of self-heating induced degradation, where Joule heat is shortly accumulated by drain current and dissipated in repeated time cycles as a function of gate bias. Enhanced positive threshold voltage shift is observed at reduced heat dissipation time, higher drain current, and increased gate width. A physical picture of Joule heating assisted charge trapping process has been proposed and then verified with pulsed negative gate bias stressing scheme, which could evidently counteract the self-heating effect through the electric-field assisted detrapping process. As a result, this pulsed gate bias scheme with negative quiescent voltage could be used as a possible way to actively suppress self-heating related device degradation.

show abstract

“…In such a nanoscale SOI device, the aggravated self-heating effect (SHE) is ubiquitous because of the increased heat generation and the reduced thermal diffusion [7,8]. The thermally induced unreliability caused by the SHEs is a pressing issue for advanced UTB SOI MOSFET, which is positively activated in lattice temperature [9,10].…”

Section: Introductionmentioning

confidence: 99%

Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms

Zhang

Lai

et al. 2019

Materials

View full text Add to dashboard Cite

The silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) suffer intensive self-heating effects due to the reduced thermal conductivity of the silicon layer while the feature sizes of devices scale down to the nanometer regime. In this work, analytical models of thermal conductivity considering the self-heating effect (SHE) in ultra-thin body fully depleted (UTB-FD) SOI MOSFETs are presented to investigate the influences of impurity, free and bound electrons, and boundary reflection effects on heat diffusion mechanisms. The thermal conductivities of thin silicon films with different parameters, including temperature, depth, thickness and doping concentration, are discussed in detail. The results show that the thermal dissipation associated with the impurity, the free and bound electrons, and especially the boundary reflection effects varying with position due to phonon scattering, greatly suppressed the heat loss ability of the nanoscale ultra-thin silicon film. The predictive power of the thermal conductivity model is enhanced for devices with sub-10-nm thickness and a heavily doped silicon layer while considering the boundary scattering contribution. The absence of the impurity, the electron or the boundary scattering leads to the unreliability in the model prediction with a small coefficient of determination.

show abstract

Electrical Characterization of the Self-Heating Effect in Oxide Semiconductor Thin-Film Transistors Using Pulse-Based Measurements

Cited by 14 publications

References 42 publications

Ultrahigh On‐Current Density of Organic Field‐Effect Transistors Facilitated by Molecular Monolayer Crystals

Ultrahigh On‐Current Density of Organic Field‐Effect Transistors Facilitated by Molecular Monolayer Crystals

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms

Contact Info

Product

Resources

About