Electrical characterization of ultrathin oxides of silicon grown by N2O plasma assisted oxidation

Bhat, Vishwanath; Bhat, K. N.; Subrahmanyam, A.

doi:10.1007/s11664-000-0151-z

Cited by 2 publications

(1 citation statement)

References 28 publications

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“…are located in the depletion region. 7 The incorporation of LTN treatment can substantially lower the PDA temperature needed to smoothen the distortion. Moreover, another benefit of the LTN treatment is its capability of suppressing the increase in EOT value even after undergoing high-temperature PDA.…”

Section: G799mentioning

confidence: 99%

Effects of Low-temperature NH[sub 3] Treatment on the Characteristics of HfO[sub 2]∕SiO[sub 2] Gate Stack

Chien

Huang

et al. 2005

J. Electrochem. Soc.

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The effects of postdeposition low-temperature (∼400°C) NH3 treatment (LTN treatment) on the characteristics of the HfO2∕SiO2 gate stack with the TiN gate electrode were studied in this work. After the HfO2 films were deposited using an AIXTRON Tricent atomic vapor deposition system, the LTN treatment was performed prior to the postdeposition annealing (PDA) step to prevent the growth of an additional interfacial layer, which is known to accompany the traditional high-temperature nitridation technique. The effective electrical oxide thickness for the devices annealed at 700°C PDA, either with or without LTN treatment, was estimated to be about 2.2 and 2.3 nm, respectively, without considering quantum effects. It was found that the LTN treatment effectively improves the characteristics of the HfO2∕SiO2 stack gates, such as capacitance-voltage (C-V) characteristics, frequency dispersion, trap generation rate, and dielectric breakdown voltage even at the high PDA temperature of 700°C.

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Section: G799mentioning

confidence: 99%

Effects of Low-temperature NH[sub 3] Treatment on the Characteristics of HfO[sub 2]∕SiO[sub 2] Gate Stack

Chien

Huang

et al. 2005

J. Electrochem. Soc.

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Electrical properties of thin film zirconia grown by ultraviolet ozone oxidation

Ramanathan

Park

McIntyre

2002

Journal of Applied Physics

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Zirconia films of varying thickness (ranging from 20–55 Å) have been grown by the method of UV ozone oxidation at room temperature. The electrical properties of these films have been studied in detail by capacitance–voltage (C–V) and I–V measurements. Capacitors were subjected to various anneals in differing ambient to study their effects on C–V hysteresis, dispersion and charge trapping. It was found that annealing in nitrogen followed by forming gas resulted in C–V curves with negligible hysteresis. The effects of different underlayers on the electrical properties of zirconia films have also been studied and are briefly discussed. It was found that zirconia films grown on UV-ozone grown SiO2 had lower hysteresis and lower interface trap density compared to zirconia films grown on chemical oxide. The effect of oxidation time and oxygen pressure have been investigated; in particular, detailed electrical studies have been performed on partially oxidized zirconia. Defective oxides are shown to have significant frequency dispersion in both the accumulation and depletion regions of the C–V curves along with very high loss tangent factor compared to stoichiometric oxides. A physical mechanism based on Maxwell–Wagner interfacial polarization is presented here for a model system of ZrO2–Zr to explain the experimental data qualitatively. Finally, we have attempted to correlate the C–V hysteresis to the presence of traps in the zirconia film using temperature-dependent current–voltage measurements. The leakage current was found to be nearly independent of temperature at low voltages, suggesting a tunneling mechanism, while at higher voltages the data can be modeled using the Poole–Frenkel conduction mechanism. It is suggested that C–V hysteresis in zirconia films possibly arises from electrical traps in the film and can be identified by modeling their I–V characteristics.

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Electrical characterization of ultrathin oxides of silicon grown by N2O plasma assisted oxidation

Cited by 2 publications

References 28 publications

Effects of Low-temperature NH[sub 3] Treatment on the Characteristics of HfO[sub 2]∕SiO[sub 2] Gate Stack

Effects of Low-temperature NH[sub 3] Treatment on the Characteristics of HfO[sub 2]∕SiO[sub 2] Gate Stack

Electrical properties of thin film zirconia grown by ultraviolet ozone oxidation

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