Electrical characterization of ZnO nanorods

Schlenker, E.; Bakin, A.; Postels, B.; Mofor, A. Che; Wehmann, H.-H.; Weimann, Thomas; Hinze, P.; Waag, A.

doi:10.1002/pssb.200675111

Cited by 19 publications

(9 citation statements)

References 16 publications

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“…the amount of the NWs on the area unit) of ZnO NWs on the substrate was estimated by AFM and is equal to several NWs per (10 µm) 2 for p-Si and less than 1 NW on (20 µm) 2 for n-Si. The dramatic difference in NWs deposition density on p-Si and n-Si is explained by huge differences in attractive forces between n-ZnO NW and p-or n-substrate.…”

Section: Resultsmentioning

confidence: 99%

“…Scanning probe microscopy (SPM) has high spatial resolution and can probe local electronic properties of the material. Several interesting applications of SPM techniques on ZnO NWs were reported (conducting-atomic force microscopy (AFM) [1][2][3], NW bending [4], patterning growth locations [5]). In this work scanning tunneling spectroscopy (STS) is used for the identification of p−n junction behavior of ZnO NWs on Si substrate.…”

Section: Introductionmentioning

confidence: 99%

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Mechanical and Electrical Properties of ZnO-Nanowire/Si-Substrate Junctions Studied by Scanning Probe Microscopy

et al. 2007

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Scanning tunneling spectroscopy was used to check the tunneling I−V characteristics of junctions formed by n-ZnO nanowires deposited on Si substrates with n-and p-type electrical conductivity (i.e. n-ZnO nanowire/ n-Si and n-ZnO nanowire/p-Si junctions, respectively). Simultaneously, several phenomena which influence the measured I−V spectra were studied by atomic force microscopy. These influencing factors are: the deposition density of the nanowires, the possibility of surface modification by tip movement (difference in attraction forces between nanowires and the p-Si and n-Si) and the aging of the surface.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Mechanical and Electrical Properties of ZnO-Nanowire/Si-Substrate Junctions Studied by Scanning Probe Microscopy

et al. 2007

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“…L 1 , L 2 , L 3 , and L 4 layers for each of them are indicated in this table. The contacts are [9][10][11][12][13][14][15][16][23][24][25][26][27][28][29] bilayer, trilayer, and quadrilayer contacts. The NW doping level is reported only for some of them.…”

Section: Validity Of the Proposed Design Rules For Ohmic Contactsmentioning

confidence: 99%

Contact mechanisms and design principles for (Schottky and Ohmic) metal contacts to semiconductor nanowires

Mohammad¹

2010

Journal of Applied Physics

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Contact mechanisms and design principles for (Ohmic and Schottky) metal (M) contacts to semiconductor nanowires (NWs) have been studied. The NWs have been assumed to be cylindrical. A unified model has been developed for the contacts. The model takes into consideration the amorphicity of the M/NW interface structure, the diameter dependence of the energy band gap, the barrier height modulation, and the fluctuations in both the barrier height and the applied bias. While the fluctuations in the barrier height are assumed to involve band tails, the fluctuations in applied bias are assumed to involve tiny Gaussian peaks. Several different features of the Ohmic and the Schottky contacts have been addressed. These include temperature and dimension dependencies of the current-voltage characteristics, the influence of the M/NW interface on the contact characteristics, the relationship between the barrier height and the ideality factor, and the barrier height reduction as a function of temperature. The model appears to be very general. It seems to explain all experimental results available to date in the literature. The calculated results are almost always in good correspondence with the experimental results. The study seemingly demonstrates an alternative to the doping dependence of the Ohmic contacts. It elucidates the fundamental physics underlying M/NW contacts. It highlights means to yield low-resistivity Ohmic contacts by thermionic emission. It describes design criteria for both Ohmic and Schottky contacts. The design criteria for Ohmic contacts tend to address the long-term reliability concerns for devices. They explain also the behavior of both good and bad Ohmic contacts. All these may be the most striking attributes of the study. These attributes explain why Schottky contacts to NWs, with proper gate modulation, may act also as Schottky barrier transistors.

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“…[16][17][18] Scanning probes have also been demonstrated as powerful tools to characterize the electrical properties of single ZnO NPs. [19][20][21][22] However few attempts have been made to determine the doping level of a system of NPs by scanning capacitance microscopy ͑SCM͒. 23 SCM is a contact mode atomic force microscopy ͑AFM͒-based technique using a conducting probe for doping imaging and junction delineation capabilities.…”

Section: Introductionmentioning

confidence: 99%

Surface-induced p-type conductivity in ZnO nanopillars investigated by scanning probe microscopy

Latu-Romain

Gilet

Chevalier

et al. 2010

Journal of Applied Physics

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International audienceScanning probe microscopy (SPM) characterizations were performed on nonintentionally doped n-type ZnO nanopillars (NPs) embedded in a polymer matrix. Transport properties investigations using scanning capacitance microscopy revealed local p-type space charge regions spreading over the outer shell of the polymer-coated ZnO NP. Correlatively, different electrical behaviors were found for the core and shell parts of the NPs using scanning spreading resistance microscopy. From SPM imaging at various voltage biases and local I-V curves, an electrical transport analysis was carried out based on surface states arising from the surrounding environment. Surface barrier potential inducing ptype conductivity in polymer-coated ZnO NPs was discussed and estimated to amount to several hundreds of millielectron- volt. As a further consequence a critical diameter under which full p-type conductivity occurs in the NPs was demonstrated both theoretically and experimentally

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Electrical characterization of ZnO nanorods

Cited by 19 publications

References 16 publications

Mechanical and Electrical Properties of ZnO-Nanowire/Si-Substrate Junctions Studied by Scanning Probe Microscopy

Mechanical and Electrical Properties of ZnO-Nanowire/Si-Substrate Junctions Studied by Scanning Probe Microscopy

Contact mechanisms and design principles for (Schottky and Ohmic) metal contacts to semiconductor nanowires

Surface-induced p-type conductivity in ZnO nanopillars investigated by scanning probe microscopy

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