Electrical conduction and TDDB reliability characterization for low-k SiCO dielectric in Cu interconnects

Wang, Robin C.J.; Chang‐Liao, Kuei‐Shu; Wang, T.K.; Chang, Meng‐Fan; Wang, C.S.; Lin, Chia-Hui; Lee, C.C.; Chiu, Catherine; Wu, Kaijie

doi:10.1016/j.tsf.2008.06.051

Cited by 22 publications

(8 citation statements)

References 4 publications

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“…In addition, no orientation relationship was observed between Fe 2 Al 5-x Zn x and steel substrate in contrast to a well-defined orientation relationship between Fe 2 Al 5 and IF steel, as reported by us previously. 16) Similar phenomena were also observed for the C-Mn-Si steels. Fig.…”

Section: Resultssupporting

confidence: 78%

“…For the portion of substrate covered by oxides, Al was depleted and the formation of Fe 2 Al 5-x Zn x was rather sluggish. The inhibition layer was therefore thin and was composed of fine grained Unlike the case for the galvanized IF steel, 16) no orientation relationship between the Fe 2 Al 5-x Zn x intermetallic and the steel substrate was observed. This could be attributed to the fact that dual phase steels usually possess a weak recrystallization texture and the population of steel grains having preferential orientations of <110> and <111> parallel to the normal direction is low.…”

Section: Resultsmentioning

confidence: 88%

“…15) We reported recently results by in-plane transmission electron microscopy (TEM) analysis of the inhibition layer formation on a TiNb-added IF steel. 16) By dissolving chemically the Fe and Zn away, large area of the inhibition layer and residual substrate is available for microscopic observation. A well-defined orientation relationship be-tween the steel substrate and the Fe 2 Al 5 compound was observed, indicating Fe 2 Al 5 forms via a heterogeneous epitaxial growth on α iron.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of the Inhibition Layer of Galvanized Dual-Phase Steels

Wang¹,

Wang²,

Chang³

et al. 2012

Corrosion Science and Technology

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The formation of the Fe-Al inhibition layer in hot-dip galvanizing is a confusing issue for a long time. This study presents a characterization result on the inhibition layer formed on C-Mn-Cr and C-Mn-Si dual-phase steels after a short time galvanizing. The samples were annealed at 800 ℃ for 60 s in N2-10% H2 atmosphere with a dew point of -30 ℃, and were then galvanized in a bath containing 0.2 %Al. X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) was employed for characterization. The TEM electron diffraction shows that only Fe2Al5 intermetallic phase was formed. No orientation relationship between the Fe2Al5 phase and the steel substrate could be identified. Two peaks of Al 2p photoelectrons, one from metallic aluminum and the other from Al 3+ ions, were detected in the inhibition layer, indicating that the layer is in fact a mixture of Fe2Al5 and Al2O3. TEM/EDS analysis verifies the existence of Al2O3 in the boundaries of Fe2Al5 grains. The nucleation of Fe2Al5 and the reduction of the surface oxide probably proceeded concurrently on galvanizing, and the residual oxides prohibited the heteroepitaxial growth of Fe2Al5.

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Section: Resultssupporting

confidence: 78%

Section: Resultsmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Analysis of the Inhibition Layer of Galvanized Dual-Phase Steels

Wang¹,

Wang²,

Chang³

et al. 2012

Corrosion Science and Technology

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“…5,6 Although the implementation of both low and high-k dielectric materials by the industry has enabled impressive gains in device performance and the continuation of Moore's law, 7,8 the electrical properties of these low and high-k materials are reduced relative to SiO 2 , and there are significant electrical reliability concerns [9][10][11] as the industry seeks to continue to implement these materials in future ,15 nm and beyond technologies. 12,13 Specific electrical reliability concerns for low-and high-k dielectrics include line-line interconnect 14,15 and gate dielectric leakage, 16,17 dielectric breakdown (V bd ), [18][19][20] time-dependent dielectric breakdown, [21][22][23][24] stress-induced leakage currents, 25,26 bias temperature instabilities, 27,28 charge trapping, [29][30][31][32] and a host of other charge-related buildup phenomena. 33,34 Despite the wide range of reliability concerns, a key ingredient in the models for all of these phenomena is some type of "defect" or "trap" in the dielectric material.…”

Section: Introductionmentioning

confidence: 99%

Detection of surface electronic defect states in low and high-k dielectrics using reflection electron energy loss spectroscopy

French

King

2013

J. Mater. Res.

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The continuation of Moore's law requires new materials at both extremes of the dielectric permittivity spectrum and an increased understanding of the fundamental mechanisms limiting their electrical reliability. To address the latter, reflection electron energy loss spectroscopy has been utilized to measure the band gap of various oxide-based low and high dielectric constant (k) materials of interest to the semiconductor industry. In situ Ar 1 sputtering has been additionally utilized to simulate process-induced defect states that are believed to contribute to electrical leakage, time-dependent dielectric breakdown, charge trapping, and other fixed-charge reliability issues in nano-electronic devices. It is observed that Ar 1 sputtering predominantly generates surface oxygen vacancy defects in the upper portion of the band gap for both low and high-k dielectric materials. These results are in agreement with numerous theoretical investigations of defects in low and high-k dielectric materials and models for mechanisms that limit their reliability.

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“…INTRODUCTION Electrical reliability in Cu interconnect structures is a growing concern as the nano-electronics industry moves to sub-16 nm technology nodes and strives to implement insulating dielectric materials with increasingly lower dielectric constants (i.e., low-k). 1,2 Electrical reliability concerns for such low-k/Cu interconnects include line-line leakage currents, 3,4 dielectric breakdown voltages (V bd ), 5,6 and time dependent dielectric breakdown (TDDB) failures. [7][8][9][10] These phenomena are typically attributed to the presence and creation of electrical "traps" or "defects" in the low-k material.…”

mentioning

confidence: 99%

Detection of defect states in low-k dielectrics using reflection electron energy loss spectroscopy

King

French

Mays

2013

Journal of Applied Physics

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A reverse Monte Carlo method for deriving optical constants of solids from reflection electron energy-loss spectroscopy spectra Reflection electron energy loss spectroscopy (REELS) has been utilized to measure the band gap (E g ) and energy position of sub-gap defect states for both non-porous and porous low dielectric constant (low-k) materials. We find the surface band gap for non-porous k ¼ 2.8-3.3 a-SiOC:H dielectrics to be ffi 8.2 eV and consistent with that measured for a-SiO 2 (E g ¼ 8.8 eV). Ar þ sputtering of the non-porous low-k materials was found to create sub-gap defect states at % 5.0 and 7.2 eV within the band gap. Based on comparisons to observations of similar defect states in crystalline and amorphous SiO 2 , we attribute these sub-gap defect states to surface oxygen vacancy centers. REELS measurements on a porous low-k a-SiOC:H dielectric with k ¼ 2.3 showed a slightly smaller band gap (E g ¼ 7.8 eV) and a broad distribution of defects states ranging from 2 to 6 eV. These defect states are attributed to a combination of both oxygen vacancy defects created by the UV curing process and carbon residues left in the film by incomplete removal of the sacrificial porogen. Plasma etching and ashing of the porous low-k dielectric were observed to remove the broad defect states attributed to carbon residues, but the oxygen vacancy defects remained.

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Electrical conduction and TDDB reliability characterization for low-k SiCO dielectric in Cu interconnects

Cited by 22 publications

References 4 publications

Analysis of the Inhibition Layer of Galvanized Dual-Phase Steels

Analysis of the Inhibition Layer of Galvanized Dual-Phase Steels

Detection of surface electronic defect states in low and high-k dielectrics using reflection electron energy loss spectroscopy

Detection of defect states in low-k dielectrics using reflection electron energy loss spectroscopy

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