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In this study, Triangular Voltage Sweep (TVS) is shown to be an effective way for quantifying the amounts of free Cu ions in porous low-k film. Free Cu ions at the interface that correlate with the Inter-Metal Dielectric (IMD) TDDB lifetime is also discussed. Adding a thermal treatment after the Chemical Mechanical Polish (CMP) process shows that the IMD TDDB lifetime can be improved by at least 2 orders of magnitude with a decrease in Cu ions at the interface. This study also proves that the TVS method can be used to evaluate Cu ions as well as Timeof-Flight Secondary Ion Mass Spectrometry (TOFSIMS).