2011
DOI: 10.1143/apex.4.071601
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Electrical Conduction Behavior of Organic Light-Emitting Diodes Using Inhomogeneous Fluorinated Self-Assembled Monolayer as a Hole-Injection Layer

Abstract: The modification of a fluorinated self-assembled monolayer (FSAM) on an indium–tin-oxide (ITO) anode enhances hole-injection from ITO and prolongs the lifetime of organic light-emitting diodes (OLEDs). The effect of inhomogeneous modification by shortening the fabrication time can be expressed as the superposition of unmodified and FSAM-modified surface conditions. The FSAM coverage is estimated to be 20–40% by contact angle, work function, atomic force microscopy phase image and current characteristics measur… Show more

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Cited by 19 publications
(11 citation statements)
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“…Luminance-current-voltage characteristics were measured using a source measure unit (Keithley 2400 Source Measure Unit) and a luminance meter (TOPCON BM-8). The measurements of luminance-current-voltage characteristics were carried out under vacuum of ~0.1 Pa. [18] and is higher than the above values. In the FSAM-modified ITO, the dipole moments of FSAM molecules are facing down to the ITO substrate since each FSAM molecule is adsorbed to ITO via silanol group.…”
Section: Measurementsmentioning
confidence: 96%
“…Luminance-current-voltage characteristics were measured using a source measure unit (Keithley 2400 Source Measure Unit) and a luminance meter (TOPCON BM-8). The measurements of luminance-current-voltage characteristics were carried out under vacuum of ~0.1 Pa. [18] and is higher than the above values. In the FSAM-modified ITO, the dipole moments of FSAM molecules are facing down to the ITO substrate since each FSAM molecule is adsorbed to ITO via silanol group.…”
Section: Measurementsmentioning
confidence: 96%
“…We have previously employed α-NPD as HTL for the fabrication of organic light emitting diode (OLED) [26][27][28] and inspired by the quest to fabricate efficient and low-cost PSCs, we studied the use of α-naphthyl diamine derivative of…”
Section: Introductionmentioning
confidence: 99%
“…The introduction of FSAM suppressed the polycrystallization of a hole transport material, lowered the driving voltage and improved the lifetime of device [1][2][3]. In addition, we introduced the new process of organic nano-dot by growing FSAM [4].…”
Section: Introductionmentioning
confidence: 99%