2014
DOI: 10.2494/photopolymer.27.327
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Electrical Conduction of Organic Thin Film with Copper/Thiol-based Self-Assembled Monolayer Anode

Abstract: We have improved lifetime and low driving voltage of the device using an electrode modified by a silane-based fluorinated self-assembled monolayer (FSAM) on ITO (transparent electrode). In the process of fabricating organic light-emitting diodes (OLEDs) devices using Ag or Cu electrode modified by a fluorinated thiol-based SAM, anomalous current saturation phenomena was observed on current-voltage characteristics only when using a thiol-SAM-modified Cu anode. When the performance of the OLED with thiol-SAM-mod… Show more

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Cited by 5 publications
(2 citation statements)
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“…Moreover, we exploited the concomitant presence of trimethoxysilane, more reactive than ethoxysilane, as a monolayer-forming agent . To the best of our knowledge, very few examples of fluorinated self-assembled FSAM-modified/ITO are reported in the literature up to date, , and this investigation is the first one devoted to the behavior of silanes containing short, environmentally safer perfluorinated groups.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, we exploited the concomitant presence of trimethoxysilane, more reactive than ethoxysilane, as a monolayer-forming agent . To the best of our knowledge, very few examples of fluorinated self-assembled FSAM-modified/ITO are reported in the literature up to date, , and this investigation is the first one devoted to the behavior of silanes containing short, environmentally safer perfluorinated groups.…”
Section: Introductionmentioning
confidence: 99%
“…We investigated the stability of film morphology [20], the carrier injection and device properties [21][22][23][24][25][26][27], and the formation of nano-dot [28] by preparation of fluorinated alkyl silole derivative on indium-tin-oxide (ITO). Especially it is important that the introduction of fluorinated self-assembled monolayer (FSAM) based on alkyl silole derivative improves the hole injection from ITO into a hole-transport material as a hole injection layer.…”
Section: Introductionmentioning
confidence: 99%