Electrical conduction in silicon monoxide films

Hill, Arthur E.; Phahle, A.M.; Calderwood, J.H.

doi:10.1016/0040-6090(70)90101-x

Cited by 38 publications

(3 citation statements)

References 6 publications

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“…45,46 Since past experimental results on silicon monoxide films reveal clear frequency dispersion, the following frequency-dispersion models are assumed based on the experimental results shown in Ref. 55.…”

Section: Device Structure Fabrication Technology and Measurementsmentioning

confidence: 99%

“…4c is acceptable given the assumption of the frequency dispersion of the conductance component and the capacitance component. Since the generation of oxygen vacancies is always considered to yield the low-resistance state while partial annihilation of them leads to the high-resistance state, 2,7,9,12 the assumption of the frequency dispersion of the capacitance component and conductance component 55 is reasonable.…”

Section: Ecsmentioning

confidence: 99%

“…It is considered that such resistive transition process is reasonable because the chemical change between weak Si-Si bonds and weak Si-O bonds does not need high energy. 55,[65][66][67] Theoretical Consideration from Viewpoints of Physics and Chemistry…”

Section: Physical and Chemical Images For Resistive Switchingmentioning

confidence: 99%

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Possible Equivalent Circuit Model and Physical Structures of Sputter-Deposited Silicon Oxide Film Showing Resistive Switching

Ōmura¹

2021

ECS J. Solid State Sci. Technol.

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Based on the results of experiments on the resistive switching behaviors of sputter-deposited silicon oxide films, this paper proposes a possible equivalent circuit model to characterize the switching behavior. It is revealed that frequency dispersion of the conductance component and capacitance component in the equivalent circuit model dominate the physical interpretation of the frequency-dependence of the components. The validity of the model and its physical interpretation are examined based on a theoretical model of the dielectric function of the conductive filament region. The polarizability of the conductive filament region suggests that the capacitance component of the conductive filament is insensitive to frequency in the low frequency range, whereas the conductance component of the conductive filament is proportional to frequency in the low frequency range. These theoretical results match experimental findings, and it is revealed that the equivalent circuit models and the frequency dispersion models for the capacitance and conductance component of the silicon oxide film are acceptable. In addition, this paper reveals the importance of the sub-oxide region and the Si precipitate region in determining the resistive switching behaviors of sputter-deposited silicon oxide film.

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Section: Device Structure Fabrication Technology and Measurementsmentioning

confidence: 99%

Section: Ecsmentioning

confidence: 99%

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Possible Equivalent Circuit Model and Physical Structures of Sputter-Deposited Silicon Oxide Film Showing Resistive Switching

Ōmura¹

2021

ECS J. Solid State Sci. Technol.

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Electrical properties of CdSe thin films covered by dielectric layers of SixOy or Dy2O3

Šnejdar¹,

Jerhot²,

Berková³

et al. 1973

Phys. Stat. Sol. (a)

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The interface properties and transport parameters of CdSeSixOy and CdSeDy2O3 thin film structures in “gap” configuration have been studied. The deposited SixOy changed the depletion layer originally present at the CdSe surface into an accumulation one while the deposited Dy2O3 only lowered the depletion of the CdSe surface. The creation of an accumulation layer at the CdSeSixOy structure results in a greater influence of the CdSe surface on the carrier scattering in the CdSe film. An attempt was made to explain the different behaviour of the dielectrics used.

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