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The interface properties and transport parameters of CdSeSixOy and CdSeDy2O3 thin film structures in “gap” configuration have been studied. The deposited SixOy changed the depletion layer originally present at the CdSe surface into an accumulation one while the deposited Dy2O3 only lowered the depletion of the CdSe surface. The creation of an accumulation layer at the CdSeSixOy structure results in a greater influence of the CdSe surface on the carrier scattering in the CdSe film. An attempt was made to explain the different behaviour of the dielectrics used.

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