Influence of substrate temperature on basic electrical properties of CdSe thin films

Šnejdar, V.; Jerhot, J.

doi:10.1016/0040-6090(72)90055-7

Cited by 31 publications

(6 citation statements)

References 8 publications

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“…reviews of film growth of II-VI materials by Ray (1969) and Holt and Wilcox (1971). For particular reference to CdS see Addiss (1962), Dresner and Shallcross (1963), Shalimova et aZ (1964), Shallcross (1966), Foster (1967), Meirsschaut (1971), for CdSe see Kubovy et a1 (1969), Dhere and Goswami (1969), Svechnicov et a1 (1972), Snejdar and Jerhot (1972) and Dhere et aZ(1977), and for CdTe see Goldstein and Pensak (1959), Semiletov (1962), Kamiyama et aZ(1962), Glang et aZ(1963), Shalimova et a1 (1966) and Matsumo and Tnoue (1967)) Increased substrate temperature was also found to lead to larger crystals and increased deposition rate to increase the degree of imperfection in the films. The most commonly observed orientation is {OOOI), although several other orientations have been observed.…”

Section: Introdiictionmentioning

confidence: 99%

The structure and growth of thin films of CdS, CdSe and CdTe condensed in vacuum on to polished stainless steel substrates at room temperature

Boichot¹,

Wilman²

1980

J. Phys. D: Appl. Phys.

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Polycrystalline films of CdS, CdSe, and CdTe up to 104 AA thick were condensed on to polished stainless steel substrates initially at room temperature in residual air at pressures from 5*10-3 to 10-7 Torr, at normal and oblique vapour incidence. Surface structures at a series of film thicknesses were determined by high-energy electron diffraction. Randomly disposed hexagonal crystals were observed up to a thickness H, at the surfaces of films condensed at residual air pressure p after which strong (0001) orientation was developed in the further deposition. At normal incidence H was approximately 1000 AA for p=5*10-3 Torr, and H rose with decrease in p, up to approximately 1500 AA at 5*10-7 Torr.

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Section: Introdiictionmentioning

confidence: 99%

The structure and growth of thin films of CdS, CdSe and CdTe condensed in vacuum on to polished stainless steel substrates at room temperature

Boichot¹,

Wilman²

1980

J. Phys. D: Appl. Phys.

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“…In CdSe films, three donor excitation levels of about 0.025, 0.14 and 0.4 eV have been observed by Snejdar and Jerho [22] and two levels of about 0.10 and 0.5 eV by Wagner and Breitweiser [19]. In CdTe films, we have observed a number of donor levels (both deep and shallow).…”

Section: Resultsmentioning

confidence: 61%

“…The increase in film resistance of the film deposited at 373 K may be due to the increase in percentage Se of the film with increasing deposition temperature [22], which improves the film stoichiometry. As the deposition temperature increases, the condensation coefficients of the elements are modified in such a manner that the percentage Se in the film increases.…”

Section: Resultsmentioning

confidence: 99%

Electrical conduction and transmission electron microscopy studies of CdSe0.8Te0.2 thin films

Sebastian

Sivaramakrishan

1991

J Mater Sci

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Electrical resistance of CdSeo.8Teo.2 thin films were found to be dependent on various film parameters such as substrate temperature, film thickness, deposition rate and post-deposition heat treatment in different environments. A decrease in film resistivity was observed for thicker films and for those heat treated in vacuum. Films deposited at higher substrate temperatures and faster rates showed an increase in film resistivity. A spectrum of activation energies was observed in the films which fell within either of the activation energies observed in CdSe or CdTe films. Films heated in an oxygen environment showed an increase in film resistivity with a different activation energy. Transmission electron microscopy (TEM) of the films showed an improvement in crystallinity with increasing film thickness and substrate temperature, and a reduction in crystallinity with increasing deposition rate.

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“…In the positive‐bias range, no luminescence could be detected even for voltages as high as +10 V. This asymmetry can be understood by the presence of n‐doped CdSe wires, the Fermi level of which is pinned to the gold substrate such that hole injection is attainable only from the tungsten tip (Figure 5b). The n‐type doping of CdSe is well documented, for example, for thin evaporated films of CdSe34–36 with electron concentrations of up to 10 18 cm −3 . In addition, electrical transport measurements on single CdSe NWs have clearly revealed n‐type behavior 20.…”

Section: Resultsmentioning

confidence: 99%

Scanning Tunneling Luminescence of Individual CdSe Nanowires

Lutz

Kabakchiev

Dufaux

et al. 2011

Small

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The local luminescence properties of individual CdSe nanowires composed of segments of zinc blende and wurtzite crystal structures are investigated by low-temperature scanning tunneling luminescence spectroscopy. Light emission from the wires is achieved by the direct injection of holes and electrons, without the need for coupling to tip-induced plasmons in the underlying metal substrate. The photon energy is found to increase with decreasing wire diameter due to exciton confinement. The bulk bandgap extrapolated from the energy versus diameter dependence is consistent with photon emission from the zinc blende-type CdSe sections.

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Influence of substrate temperature on basic electrical properties of CdSe thin films

Cited by 31 publications

References 8 publications

The structure and growth of thin films of CdS, CdSe and CdTe condensed in vacuum on to polished stainless steel substrates at room temperature

The structure and growth of thin films of CdS, CdSe and CdTe condensed in vacuum on to polished stainless steel substrates at room temperature

Electrical conduction and transmission electron microscopy studies of CdSe0.8Te0.2 thin films

Scanning Tunneling Luminescence of Individual CdSe Nanowires

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