Hall effect in polycrystalline semiconductors

Jerhot, J.; Šnejdar, V.

doi:10.1016/0040-6090(78)90181-5

Cited by 35 publications

(12 citation statements)

References 9 publications

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“…For polycrystalline samples, however, the effect of grain boundaries on the Hall analysis has to be taken into account. We employ the model of Jerhot and Snejdar [8], where we assume thermionic emission over a potential barrier for majority carriers. As shown by the lines in Fig.…”

Section: Hall Analysismentioning

confidence: 99%

What is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se 2 ?

et al. 2017

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We compare the dopant concentration of polycrystalline Cu(In,Ga)Se 2 thin film absorbers derived from Hall and capacitance-voltage measurements. Although both measurements techniques appear to be reliable, dopant concentrations determined by capacitance-voltage analysis are significantly lower and vary with probing depth into the absorber. The doping profiles and differences between both measurement techniques are consistent with Cd in-diffusion from the CdS buffer layer during solar cell fabrication. Different doping profiles obtained after a variation of the CdS deposition process support this scenario.

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Section: Hall Analysismentioning

confidence: 99%

What is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se 2 ?

et al. 2017

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“…For thermionic emission or tunneling through the grain boundary Jerhot and Snejdar 21 find instead that…”

Section: A Hall Mobility Of Polycrystalline Semiconductorsmentioning

confidence: 99%

“…Furthermore, we shall assume that the grain boundaries act as potential barriers, hence impeding current flow. For these conditions, calculations by various authors 18,[20][21][22][23][24] show that valuable information about the transport properties of the specimen can still be obtained for polycrystalline films.…”

Section: A Hall Mobility Of Polycrystalline Semiconductorsmentioning

confidence: 99%

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Hall measurements on low-mobility thin films

Werner

2017

Journal of Applied Physics

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We review the conventional measuring standard for dc Hall measurements in van der Pauw configuration with particular focus on the challenges arising from a small Hall signal compared to sizable offset voltages, which is a typical scenario for many material systems, particularly low-mobility thin films. We show that the conventional approach of using a simple field-reversal technique is often unsuited to obtain reliable results, and present an improved correction scheme to extend the accessible measurement range to mobility values well below 1 cm 2

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“…µc-Si:H can be considered as a two-phase material. Its composition can be interpreted as grains of crystalline silicon embedded in an a-Si:H tissue [6].The structural properties of µc-Si:H are therefore strongly dependent on the deposition and process conditions used [7]. Evidence of different film morphology have been found in samples deposited with different processes [8,9,10,11,12].…”

Section: Introductionmentioning

confidence: 99%

Influence of the Grain Boundary Band Offset on Charge Transport Mechanism in Microcrystalline Silicon Analysed by Numerical Simulation

Fantoni¹,

Vieira

Schwarz³

2000

MRS Proc.

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Microcrystalline silicon is a two-phase material composed of grains of crystalline silicon embedded in an amorphous silicon tissue. The boundary regions between the crystalline grains and the amorphous matrix are treated similarly to a heterojunction interface.The band offset at the grain boundaries causes the appearance of local electric field peaks, variables in intensity and direction. We present results obtained with two dimensional simulations of a µc-Si:H p-i-n junction in short circuit condition. Charge transport mechanism is described by the internal electric configuration assumed by the junction in thermodynamic equilibrium and illuminated with monochromatic radiations. Different configurations of the band offset at the grain boundaries are also considered and related to the transport properties in microcrystalline silicon

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Hall effect in polycrystalline semiconductors

Cited by 35 publications

References 9 publications

What is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se 2 ?

What is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se 2 ?

Hall measurements on low-mobility thin films

Influence of the Grain Boundary Band Offset on Charge Transport Mechanism in Microcrystalline Silicon Analysed by Numerical Simulation

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