Electrical conduction in SnO2 varistors

Glot, A.B.; Gaponov, A.V.; Sandoval-García, A.P.

doi:10.1016/j.physb.2009.09.091

Cited by 34 publications

(32 citation statements)

References 24 publications

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“…In the past decades, a great number of papers on new SnO 2 -based varistors have been published [1][2][3][4][5][6][7][8][9][10][11]. Non-linear coefficient and breakdown voltage are the most important performance parameters of a varistor.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of nanosized (Co, Nb, Sm)-doped SnO2 powders using co-precipitation method

Bastami

Taheri-Nassaj

2010

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Synthesis of nanosized (Co, Nb, Sm)-doped SnO2 powders using co-precipitation method

Bastami

Taheri-Nassaj

2010

Journal of Alloys and Compounds

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“…As a possible confirmation of hole generation at high fields in ZnO varistors, the observation of electroluminescence [21,22] and negative capacitance [23] are considered. Earlier the negative capacitance was observed in SnO 2 varistors with low nonlinearity [4], and recently we have observed the negative capacitance in SnO 2 -Co 3 O 4 -Nb 2 O 5 -Cr 2 O 3 -CuO ceramics with high nonlinearity [24].…”

Section: To 5)mentioning

confidence: 53%

Non-ohmic conduction in tin dioxide based ceramics with copper addition

Gaponov¹,

Glot²

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The current-voltage characteristics and temperature dependences of electrical conductivity in SnO 2 -Co 3 O 4 -Nb 2 O 5 -Cr 2 O 3 -CuO semiconductor ceramics are studied, and possible mechanism of non-ohmic conduction in these materials is discussed. Due to addition of CuO up to 0.5 mol.%, the nonlinearity coefficient is increased up to 75, and the electric field is decreased down to (at ). It makes CuO addition useful for the preparation of SnO (the barrier height φ) is decreased with an increase in the electric field E. The higher slope of the dependence at high fields can be related to a participation of minority carriers (holes). The addition of more than 0.5 mol.% CuO leads to degradation of the varistor effect due to percolation via quite conductive CuObased intergranular phase.

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“…The SnO 2 -based ceramics have been studied widely for their usage as semi conducting devices such as gas sensors [1] and varistors [2][3][4][5][6][7][8]. The porous structure of this kind of ceramics is necessary in the application fields of gas sensors whereas, the high sinterability is crucial for SnO 2 -based varistors.…”

Section: Introductionmentioning

confidence: 99%

Effect of Zn2SnO4 on the sintering and electrical properties of SnO2 ceramics

Zang

et al. 2013

J Electroceram

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SnO 2 ceramics with relative density about 98 % were obtained based on the addition of Zn 2 SnO 4 . The shrinkage of the ceramic samples increased sharply and got a saturated value about 13.3 % with doping more than 0.2 mol% Zn 2 SnO 4 . In the dielectric spectra, no relaxation peaks were observed and no deep trap states could be detected from 50-300°C and 40-5 MHz. Thus, the oxygen vacancies may not be necessary for the densification of SnO 2 ceramics during sintering process. For all the samples, nonlinear electrical properties were observed and the breakdown electrical fields are in good agreement with the barrier height. With increasing Zn 2 SnO 4 content, the activation energies E a for O − or O 2− adsorbed at grain boundary decreased and the doping of Zn 2 SnO 4 may be an important reason for the improve of grain conductivity and formation of Schottky barrier.

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Electrical conduction in SnO2 varistors

Cited by 34 publications

References 24 publications

Synthesis of nanosized (Co, Nb, Sm)-doped SnO2 powders using co-precipitation method

Synthesis of nanosized (Co, Nb, Sm)-doped SnO2 powders using co-precipitation method

Non-ohmic conduction in tin dioxide based ceramics with copper addition

Effect of Zn2SnO4 on the sintering and electrical properties of SnO2 ceramics

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