Electrical conduction mechanism in BiFeO<sub>3</sub>-based ferroelectric thin-film capacitors: Impact of Mn doping

Matsuo, Hiroki; Kitanaka, Yuuki; Miyayama, Masaru

doi:10.1016/j.jascer.2015.10.001

Cited by 20 publications

(7 citation statements)

References 43 publications

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“…Likewise, similar behavior indicating a swift slope (∼8.3) is shown above the TFL region. Indeed, this is often found in leakage mechanisms of BiFeO 3 films, reported previously 29,30) The polarization versus electric field (P-E) hysteresis loops of the columnar BiFeO 3 thick films measured at 20 kHz and RT are shown in Fig. 5.…”

Section: Electric and Ferroelectric Properties Of Columnar Bifeo 3 Th...supporting

confidence: 59%

Characterization of columnar BiFeO₃ thick films prepared by magnetic field-assisted pulsed laser deposition

Park,

Okuyama

2024

Jpn. J. Appl. Phys.

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Polycrystalline BiFeO3 thick films were prepared on Pt/TiO2/SiO2/Si substates by using magnetic field-assisted pulsed laser deposition. Columnar BiFeO3 thick films were successfully obtained with a thickness of 1.8 μm, owing to an oblique incoming flux and high deposition rate by the confinement of the plume under a magnetic field. In the columnar BiFeO3 thick films, a saturated P-E hysteresis loop was obtained at RT, and the remanent polarization (P r ) and coercive field (E c ) were 42 μC cm−2 and 380 kV cm−1, respectively. Also, the piezoelectric response measured by atomic force microscopy showed a butterfly-shaped curve, and the piezoelectric d 33 coefficient was about 50 pm V−1.

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Section: Electric and Ferroelectric Properties Of Columnar Bifeo 3 Th...supporting

confidence: 59%

Characterization of columnar BiFeO₃ thick films prepared by magnetic field-assisted pulsed laser deposition

Park,

Okuyama

2024

Jpn. J. Appl. Phys.

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“…As the voltage decreases, the Ohmic conduction mechanism is restored. The same transition law is applied to the positive bias region, the Ohmic conduction is performed at low voltage, and the Child's law is met at high voltage, a jump process with large slope between HRS and LRS, which is consistent with the mechanism of trapcontrolled Space-ChargeLimited-Conduction (SCLC) [22,23]. Since Ohmic conductance and SCLC conductance are both bulk-limited conductance mechanisms, it can be judged that the first type RS behavior is caused the generation and fracture of oxygen vacancy conductive filaments (CF) [24][25][26].…”

Section: Resultsmentioning

confidence: 56%

The transformation of digital to analog resistance switching behavior in Bi₂FeCrO₆ thin films

Jiang

Zhou

Tang

et al. 2021

Journal of Asian Ceramic Societies

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Bi 2 FeCrO 6 (BFCO) thin films were fabricated by sol-gel method. Digital and analog resistive switching behaviors were sequentially observed in Au/BFCO/FTO/Glass structure by applying a continuous cyclic voltage. By analyzing formation mechanism of the two types of the resistive switching behaviors, it is found that the digital resistive behavior conductance mechanism is a bulk-limited conduction, and the analog resistive switching behavior is accompanied with rectification effects and negative differential resistance behaviors, which are considered as interface-limited conductivity behaviors. So the change of digital and analog resistive switching behaviors may be result of the transformation of conductive mechanism. These research results will help us to design and manufacture digital and analog multifunctional resistive switching memory devices.

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“…Moreover, BFMO5 films exhibit higher dark conductivity (σ dark ) than BFO films irrespective of their domain structures, probably because Mn atoms create electron-half-occupied defect states within the bandgap that can act as an acceptor level. 40)…”

Section: Resultsmentioning

confidence: 99%

Impact of Mn doping on the ferroelectric photovoltaic effect in multidomain BiFeO₃ thin films under above-bandgap illumination

Matsuo

Noguchi

2023

Jpn. J. Appl. Phys.

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While recent studies have revealed that chemical doping can enhance the photovoltaic (PV) response of ferroelectrics under light with photon energy (hν) lower than the bandgap energy (E g), its impact under above-bandgap illumination (hν > E g) is not fully understood. In this study, the PV response at hν > E g of Mn-doped BiFeO3 (BFO) thin films with a periodic stripe domain pattern is investigated. The short-circuit photocurrent density (J sc) and open-circuit voltage decrease with increasing Mn content. Analyses of the light-polarization angle dependence of J sc indicate that the PV response arises primarily from the non-centrosymmetric nature of crystal lattices in both the bulk and domain wall (DW) regions. In contrast, the contribution of local electric fields (E local) across DWs which dominates the PV response of undoped BFO films is significantly suppressed by doping. We consider that a screening effect by charged defects leads to a suppressed E local in the Mn-doped films.

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Electrical conduction mechanism in BiFeO₃-based ferroelectric thin-film capacitors: Impact of Mn doping

Cited by 20 publications

References 43 publications

Characterization of columnar BiFeO₃ thick films prepared by magnetic field-assisted pulsed laser deposition

Characterization of columnar BiFeO₃ thick films prepared by magnetic field-assisted pulsed laser deposition

The transformation of digital to analog resistance switching behavior in Bi₂FeCrO₆ thin films

Impact of Mn doping on the ferroelectric photovoltaic effect in multidomain BiFeO₃ thin films under above-bandgap illumination

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Electrical conduction mechanism in BiFeO3-based ferroelectric thin-film capacitors: Impact of Mn doping

Cited by 20 publications

References 43 publications

Characterization of columnar BiFeO3 thick films prepared by magnetic field-assisted pulsed laser deposition

Characterization of columnar BiFeO3 thick films prepared by magnetic field-assisted pulsed laser deposition

The transformation of digital to analog resistance switching behavior in Bi2FeCrO6 thin films

Impact of Mn doping on the ferroelectric photovoltaic effect in multidomain BiFeO3 thin films under above-bandgap illumination

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Product

Resources

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Electrical conduction mechanism in BiFeO₃-based ferroelectric thin-film capacitors: Impact of Mn doping

Characterization of columnar BiFeO₃ thick films prepared by magnetic field-assisted pulsed laser deposition

Characterization of columnar BiFeO₃ thick films prepared by magnetic field-assisted pulsed laser deposition

The transformation of digital to analog resistance switching behavior in Bi₂FeCrO₆ thin films

Impact of Mn doping on the ferroelectric photovoltaic effect in multidomain BiFeO₃ thin films under above-bandgap illumination