Electrical conduction mechanisms and dielectric relaxation in Al2O3 thin films deposited by thermal atomic layer deposition

Altuntaş, H.; Kaplan, Kemal

doi:10.1016/j.mssp.2018.06.027

Cited by 18 publications

(11 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2c and 4j, the model qualitatively reproduces the expected voltage dependence [9], but with lower overall values as the HZO is not fully orthorhombic. Moreover, the extracted frequency profile is compatible with literature reports [3,11].…”

Section: Small-signal Model Validationsupporting

confidence: 88%

“…The extracted values are lower than those reported for purely orthorhombic HZO due to . d) The DE permittivity is considered frequency dependent [3,11] using the equation in the figure, in order to include the effect of the ALD. For our device, the extracted corner frequency is in the range of values already presented in the literature [3,11].…”

Section: Proposed Small-signal Model Of the Ftjmentioning

confidence: 99%

See 1 more Smart Citation

Understanding the Reliability of Ferroelectric Tunnel Junction Operations using an Advanced Small-Signal Model

Benatti

Puglisi

2021

2021 IEEE International Integrated Reliability Workshop (IIRW)

View full text Add to dashboard Cite

Ferroelectric technology is becoming ever more appealing for a variety of applications, especially analog neuromorphic computing. In this respect, elucidating the physical mechanisms occurring during device operation is of key importance to improve the reliability of ferroelectric devices. In this work, we investigate ferroelectric tunnel junctions (FTJs) consisting of a ferroelectric hafnium zirconium oxide (HZO) layer and an alumina (Al2O3) layer by means of C-f and G-f measurements performed at multiple voltages and temperatures. For a dependable interpretation of the results, a new small signal model is introduced that goes beyond the state of the art by i) separating the role of the leakage in the two layers; ii) including the significant impact of the series impedance (that depends on the samples layout); iii) including the frequency dependence of the dielectric permittivity; iv) accounting for the fact that likely not the whole HZO volume crystallizes in the orthorhombic ferroelectric phase. The model correctly reproduces measurements taken on different devices in different conditions. Results highlight that the typical estimation method for interface trap density may be misleading.

show abstract

Section: Small-signal Model Validationsupporting

confidence: 88%

Section: Proposed Small-signal Model Of the Ftjmentioning

confidence: 99%

Understanding the Reliability of Ferroelectric Tunnel Junction Operations using an Advanced Small-Signal Model

Benatti

Puglisi

2021

2021 IEEE International Integrated Reliability Workshop (IIRW)

View full text Add to dashboard Cite

show abstract

“…The low-frequency capacitance changes slightly after exceeding 50 nm, which is consistent with device performance. It is worthy of noting that the capacitance of 100 nm device shows a clear downward trend at high frequencies (>10 kHz), which may be attributed to the orientation of dipole induced by the defects and fixed charges in the AlO x film . The frequency-dependent dielectric loss (Figure f) also demonstrates the dielectric relaxation.…”

Section: Resultsmentioning

confidence: 87%

“…It is worthy of noting that the capacitance of 100 nm device shows a clear downward trend at high frequencies (>10 kHz), which may be attributed to the orientation of dipole induced by the defects and fixed charges in the AlO x film. 52 The frequency-dependent dielectric loss (Figure 3f) also demonstrates the dielectric relaxation. At low frequencies (<1 Hz), devices without AlO x show higher dielectric loss, which may be due to space charge polarization.…”

Section: Devicesmentioning

confidence: 91%

Impact of AlO_x Dielectric Layer on Performance in Two-Dimensional Perovskite Photovoltaic Devices

Wang

Xiao

et al. 2023

ACS Appl. Energy Mater.

View full text Add to dashboard Cite

Metallic electrode interfacial properties have a crucial impact on the performance of photovoltaic devices. The interfacial interactions between electrodes and transport layers are critical for charge separation, transport, and collection. Herein, we investigate the interfacial interaction between the aluminum electrode and 6,6-phenyl-C61-butyric acid methyl ester (PCBM) on the performance in two-dimensional perovskite photovoltaic devices. It is observed that the aluminum oxide dielectric layer formed at the interface of aluminum electrode and PCBM, accumulating charges to achieve a high voltage (>5 V) in two-dimensional perovskite photovoltaic devices. Further regulating the aluminum oxide layer can optimize the device performance (voltage, current density, series resistance, and efficiency). The capacitive effect of the aluminum oxide dielectric layer is responsible for this high voltage response. This work will provide a reference for future research on the electrode/PCBM interface in perovskite photovoltaic devices.

show abstract

“…Leakage currents in gate oxides of common electronic circuits represent the key limiting factor slowing down the Moore's law progression to ever smaller and denser electronic circuits. Regardless of its importance in a great variety of nanoscale electronic devices, the physical origin of the leakage current in common dielectric is not well understood, especially at the nanoscale 1,2,3 .…”

Section: Introductionmentioning

confidence: 99%

Reversed Photoeffect in Transparent Graphene Nanocapacitors

Belkin

Ilin

Burkova

et al. 2019

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Electronic properties of ultrathin dielectric films consistently attract much attention since they play important roles in various electronic devices, such as field effect transistors and memory elements. Insulating properties of the gate oxide in transistors represent the key factor limiting Moore's law. The dielectric strength of the insulating film limits how much energy can be stored in nanocapacitors. The origin of the electric current in the nanometer-scale insulating barrier remains unexplained. Here we present an optically transparent Al-Al2O3-graphene nanocapacitor suitable for studying electronic transport in calibrated nanoscale dielectric films under high electric fields and with light exposure. The controllable flow of photons provides an additional powerful probe helping to resolve the puzzle of the electric conductivity in these highquality insulating films. The dielectric alumina, Al2O3, is deposited by atomic layer deposition technology. With this device we observe a photon-assisted field emission effect, in which the effective barrier height is reduced by a quantity equal to the photon energy. Our main finding is a reversed photoeffect. Namely, at sufficiently high bias voltages the current through the dielectric film decreases as the light intensity increases. Moreover, higher photon energies correlate with stronger decreases of the current. To explain this reversed photoeffect, we present a qualitative model based on a conjecture that electrons leak into the dielectric and form charged sandpile-like branching patterns, which facilitate transport, and which can be dispersed by light.

show abstract

Electrical conduction mechanisms and dielectric relaxation in Al2O3 thin films deposited by thermal atomic layer deposition

Cited by 18 publications

References 38 publications

Understanding the Reliability of Ferroelectric Tunnel Junction Operations using an Advanced Small-Signal Model

Understanding the Reliability of Ferroelectric Tunnel Junction Operations using an Advanced Small-Signal Model

Impact of AlO_x Dielectric Layer on Performance in Two-Dimensional Perovskite Photovoltaic Devices

Reversed Photoeffect in Transparent Graphene Nanocapacitors

Contact Info

Product

Resources

About

Electrical conduction mechanisms and dielectric relaxation in Al2O3 thin films deposited by thermal atomic layer deposition

Cited by 18 publications

References 38 publications

Understanding the Reliability of Ferroelectric Tunnel Junction Operations using an Advanced Small-Signal Model

Understanding the Reliability of Ferroelectric Tunnel Junction Operations using an Advanced Small-Signal Model

Impact of AlOx Dielectric Layer on Performance in Two-Dimensional Perovskite Photovoltaic Devices

Reversed Photoeffect in Transparent Graphene Nanocapacitors

Contact Info

Product

Resources

About

Impact of AlO_x Dielectric Layer on Performance in Two-Dimensional Perovskite Photovoltaic Devices