Electrical conduction mechanisms in piezoelectric ceramics under harsh operating conditions

Zheng, Deyi; Swingler, Jonathan

doi:10.1016/j.sna.2010.10.022

Cited by 16 publications

(18 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As such, humidity is a severe ambient stressor [21]- [24]. Operation in humid conditions causes cracking, resistance degradation, excessive leakage, and time-dependent dielectric breakdown (TDDB) considerably faster than for operation under dry conditions [25], [26]. For PZT-based piezoMEMS, early onset of transient leakage currents and excessive Joule-heating, which locally vaporize the stack material, has been well established as one of the main degradation effects [27]- [29].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

On the Effect of Water-Induced Degradation of Thin-Film Piezoelectric Microelectromechanical Systems

Dahl-Hansen

Tyholdt

Gjessing

et al. 2021

J. Microelectromech. Syst.

View full text Add to dashboard Cite

Lifetime and reliability in realistic operating conditions are important parameters for the application of thin-film piezoelectric microelectromechanical systems (piezoMEMS) based on lead zirconate titanate (PZT). Humidity can induce time-dependent dielectric breakdown at a higher rate compared to dry conditions, and significantly alter the dynamic behavior of piezoMEMS-devices. Here we assess the lifetime and reliability of PZT-based micromirrors with and without humidity barriers operated at 23 • C in an ambient of 0 and 95 % relative humidity. The correlation of the dynamic response, as well as the ferroelectric, dielectric, and leakage properties, with degradation time was investigated. In humid conditions, the median timeto-failure was increased from 2.7×10 4 [1.9×10 4 −4.0×10 4 ] s to 1.1×10 6 [0.9×10 6 −1.5×10 6 ] s at 20 V AC continuous unipolar actuation, by using a 40 nm thick Al 2 O 3 humidity barrier. However, the initial maximum angular deflection, polarization, and dielectric permittivity decreased by about 6, 11, and 12 %, respectively, for Al 2 O 3 capped devices. For both bare and encapsulated devices, the onset of electrothermal breakdown-events was the dominant cause of degradation. Severe distortions in the device's dynamic behavior, together with failure from loss of angular deflection, preceded time-dependent dielectric breakdown in 95% relative humidity. Moreover, due to the film-substrate stress transfer sensitivity of thin-film devices, water-induced degradation affects the reliability of thin-film piezoMEMS differently than bulk piezoMEMS. [2020-0228]

show abstract

Section: Introductionmentioning

confidence: 99%

“…The lifetime of piezoMEMS-devices is often assessed by direct current (DC) TDDB measurements accelerated by electric fields and elevated temperatures [18], [25], [40]- [43]. DC electrical field reliability relates to the various charge-trapping processes and conduction-mechanisms of the thin-film.…”

Section: Introductionmentioning

confidence: 99%

On the Effect of Water-Induced Degradation of Thin-Film Piezoelectric Microelectromechanical Systems

Dahl-Hansen

Tyholdt

Gjessing

et al. 2021

J. Microelectromech. Syst.

View full text Add to dashboard Cite

show abstract

“…A simple calculation [21] based on the distance between the electrodes (0.15 mm), the applied voltage (250 V) and the resistivity of Ni (7×10 −8 m) shows that a current of 100 µA (sufficient to cause problems in low power devices) could be achieved by a single 2 nm diameter cylindrical filament bridging the electrode gap. The volumetric concentration of Ni would be 3×10 −14 .…”

Section: Introductionmentioning

confidence: 99%

The effects of porosity, electrode and barrier materials on the conductivity of piezoelectric ceramics in high humidity and dc electric field

Weaver

Cain

Stewart

et al. 2012

Smart Mater. Struct.

View full text Add to dashboard Cite

Prolonged operation of piezoelectric ceramic devices under high dc electric fields promotes leakage currents between the electrodes. This paper investigates the effects of ceramic porosity, edge conduction and electrode materials and geometry in the development of low resistance conduction paths through the ceramic. Localized changes in the ceramic structure and corresponding microscopic breakdown sites are shown to be associated with leakage currents and breakdown processes resulting from prolonged operation in harsh environments. The role of barrier coatings in mitigating the effects of humidity is studied, and results are presented on improved performance using composite diamond-like carbon/polymer coatings. In contrast to the changes in the electrical properties of the ceramic, the measurements of the piezoelectric properties showed no significant effect of humidity.

show abstract

“…From the samples 2 to 5, there are some BT, PFN, PZT, BCT, BF and Sb 2 O 4 phases.But different from the the other samples, the sample 1 has no obvious double diffraction peak around the 21°, this is because the sample 1 has no BF phase exist.But the diffraction peak of the secondary phase gradually disappeared with the increased of the sintering temperatures, the electrical properties of the sample will become better [3,4].The scanning regions range from 10° to 60°. Fig.2 is the SEM photography of the PBSFCZT doped 0.5%Nb 2 O 5 ceramic samples sintered at different sintering temperatures (1120℃,1150℃,1180℃and1210℃).…”

Section: Analysis Of Xrdmentioning

confidence: 99%

The Research on the Microstructure and Electrical Properties of Nb2O5 Doped PBSFCZT Ceramics

Han¹,

Zheng²,

Zhao³

et al. 2014

Proceedings of the 2015 International Conference on Material Science and Applications

View full text Add to dashboard Cite

Abstract. In order to improve the electrical properties of PZT piezoelectric ceramic material, the effect of sintering temperature on the microstructure and electrical properties of the Nb 2 O 5 doped PBFSZT ceramic material. The crystalline phase and microstructure of the PBSFCZT+0.5% Nb2O5 ceramic were analyzed at the different sintering temperatures (1120℃, 1150℃, 1180℃and 1210℃) by x-ray diffraction (XRD) and scanning electron microscopy (SEM) respectively. The results of the experiment show that the amounts of the Nb2O5 was 0.5%, the grain size of the PBSFCZT piezoelectric ceramic materials decreased correlated with the increasing of the sintering temperature. When the sintering temperature at 1180℃, the grain growths well and the grain-boundary intersection in tight, an excellent comprehensive electrical properties of the PBSZT ceramics material are as follows : ε=3626, tanδ=1.7, d33=478PC/N, Kp=0.669. These results proved that appropriate softness doping can decrease the sintering temperature and improve the piezoelectric properties of the PBSFCZT ceramic material.

show abstract

Electrical conduction mechanisms in piezoelectric ceramics under harsh operating conditions

Cited by 16 publications

References 9 publications

On the Effect of Water-Induced Degradation of Thin-Film Piezoelectric Microelectromechanical Systems

On the Effect of Water-Induced Degradation of Thin-Film Piezoelectric Microelectromechanical Systems

The effects of porosity, electrode and barrier materials on the conductivity of piezoelectric ceramics in high humidity and dc electric field

The Research on the Microstructure and Electrical Properties of Nb2O5 Doped PBSFCZT Ceramics

Contact Info

Product

Resources

About