Electrical conductivity of tungsten doped vanadium dioxide obtained by the sol–gel technique

Pergament, A. L.; Стефанович, Г. Б.; Berezina, O. Ya.; Kirienko, D. A.

doi:10.1016/j.tsf.2013.01.011

Cited by 34 publications

(28 citation statements)

References 18 publications

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“…We thus arrive at a conclusion that the experimental facts presented above could not be described only in terms of a purely phonon mechanism of the MIT in VO 2 , and a correct description of this transition should involve the Mott-Hubbard electron-correlation effects [44], [57], [62], [66], [67].…”

Section: B Properties Of Vomentioning

confidence: 77%

“…Moreover, in some cases, alloying may result in complete suppression of the transition and metal conductivity appears at temperatures <300 K (for example, under tungsten doping to a level of about 9.5 at. % of W [57], [58]; the doping effect will be also discussed below in Section II.C). The oxygen excess, or doping with impurities of the Fe(3+) group, usually results in an increase in the value of T t , and the data on E a and ρ s are contradictory.…”

Section: B Properties Of Vomentioning

confidence: 99%

“…Nonetheless, one should be aware of the fact (and take this fact into account when analyzing the VO 2 -based electronic devices) that the initiating mechanism is still the Mott transition [44], [57], [62], [67], [68]. It is fair to admit that some researchers continue to insist that the Peierls instability plays a dominant role in the transition mechanism [61].…”

Section: B Properties Of Vomentioning

confidence: 99%

“…% of W [57], [58], [80], [81]), this can be treated in terms of the Mott MIT. Substitution of a W 6+ ion for a V 4+ ion produces two V 3+ ions, as dictated by the electroneutrality condition.…”

Section: Transition Mechanism: the Role Of Electron Correlationsmentioning

confidence: 99%

See 3 more Smart Citations

Oxide Electronics and Vanadium Dioxide Perspective: A Review

Pergament¹,

Стефанович²,

Velichko³

2013

Journal on Selected Topics in Nano Electronics and Computing

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-Metal-oxide-semiconductor field-effect transistors (MOSFET) have been for a long time the key elements of modern electronics industry. For the purpose of a permanent integration enhancement, the size of MOSFET has been decreasing exponentially for over decades in compliance with Moore's Law, but nowadays, owing to the intrinsic restrictions, the further scaling of MOSFET devices either encounters fundamental limits or demands for more and more sophisticated and expensive engineering solutions. Alternative approaches and device concepts are currently designed both in order to sustain an increase of the integration degree, and to improve the functionality and performance of electronic devices. Oxide electronics is one of such promising approaches which could enable and accelerate the development of information and computing technology. The behavior of delectrons in transition metal oxides is responsible for the unique properties of these materials, causing strong electronelectron correlations, which play an important role in the mechanism of metal-insulator transition. The Mott transition in vanadium dioxide is specifically the phenomenon that researchers consider as a corner stone of oxide electronics, particularly, in its special direction known as a Motttransition field-effect transistor (MTFET). This review focuses on current research, latest results, urgent problems and nearterm outlook of oxide electronics with special emphasis on the state of the art and recent progress in the field of VO 2 -based MTFETs.

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Section: B Properties Of Vomentioning

confidence: 77%

Section: B Properties Of Vomentioning

confidence: 99%

Section: B Properties Of Vomentioning

confidence: 99%

Section: Transition Mechanism: the Role Of Electron Correlationsmentioning

confidence: 99%

See 2 more Smart Citations

Oxide Electronics and Vanadium Dioxide Perspective: A Review

Pergament¹,

Стефанович²,

Velichko³

2013

Journal on Selected Topics in Nano Electronics and Computing

View full text Add to dashboard Cite

show abstract

“…Such devices include smart or switchable window glass panes (thermo-chromic and photo-chromic property) [22][23][24][25][26] as well as gas chemical sensing (gaso-chromic property) [22,27]. Uses of VO 2 in the fabrication of electrochemical devices (electro-chromic property) have also been recorded [28].…”

Section: Introductionmentioning

confidence: 99%

Phase evolution of vanadium oxides obtained through temperature programmed calcinations of ammonium vanadate in hydrogen atmosphere and their humidity sensing properties

Akande

Linganiso

Dhonge

et al. 2015

Materials Chemistry and Physics

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Device Geometry Insights for Efficient Electrically Driven Insulator‐to‐Metal Transition in Vanadium Dioxide Thin‐Films

Kabir

Nirantar

Monshipouri

et al. 2021

Adv Elect Materials

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However, the switching voltage needed for IMT in crystalline VO 2 (c-VO 2 ) highly depends on crystallinity, device structures, and electrode separations.Several device structures have been presented to investigate IMT in crystalline VO 2 triggered by electrical excitations. [10][11][12][13][14][15] Ultrafast IMT was reported with voltage excitation in VO 2 thin-film-based two terminal planar devices. [11][12][13] However, the planar structures with several micrometers gap between electrodes need higher voltages (>5 V) for switching, which is not suitable for high density and high speed

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Electrical conductivity of tungsten doped vanadium dioxide obtained by the sol–gel technique

Cited by 34 publications

References 18 publications

Oxide Electronics and Vanadium Dioxide Perspective: A Review

Oxide Electronics and Vanadium Dioxide Perspective: A Review

Phase evolution of vanadium oxides obtained through temperature programmed calcinations of ammonium vanadate in hydrogen atmosphere and their humidity sensing properties

Device Geometry Insights for Efficient Electrically Driven Insulator‐to‐Metal Transition in Vanadium Dioxide Thin‐Films

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