Electrical control of 2D magnetism in bilayer CrI3

Huang, Bevin; Clark, Genevieve; Klein, Dahlia R.; MacNeill, David; Navarro‐Moratalla, Efrén; Seyler, Kyle L.; Wilson, Nathan P.; McGuire, Michael A.; Cobden, David; Xiao, Di; Wang, Yao; Jarillo‐Herrero, Pablo; Xu, Xiaodong

doi:10.1038/s41565-018-0121-3

Cited by 1,170 publications

(989 citation statements)

References 33 publications

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“…Bilayer CrI 3 is a layered antiferromagnet that has a relatively low Néel temperature of ≈45 K 109. In bilayer CrI 3 , spins within each layer are aligned out of plane ferromagnetically and then the two layers are coupled antiferromagnetically.…”

Section: Electric‐field Control Of Antiferromagnetic Spintronic Devicesmentioning

confidence: 99%

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Electric‐Field‐Controlled Antiferromagnetic Spintronic Devices

et al. 2020

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In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric‐field control is a promising approach for achieving ultralow power spintronic devices via suppressing Joule heating. Here, cutting‐edge research, including electric‐field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, is comprehensively reviewed. Various emergent topics such as the Néel spin–orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, 2D magnetism, and magneto‐ionic modulation with respect to antiferromagnets are examined. In conclusion, the possibility of realizing high‐quality room‐temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons is highlighted. It is expected that this work provides an appropriate and forward‐looking perspective that will promote the rapid development of this field.

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Section: Electric‐field Control Of Antiferromagnetic Spintronic Devicesmentioning

confidence: 99%

“…c) Reflectance magneto‐circular dichroism signal of a bilayer CrI 3 film versus applied magnetic field at a carrier density changing from 0 (black) to 4.4 × 10 −12 cm −2 (red) at a step of 1.1 × 10 −12 cm −2 . Reproduced with permission 109. Copyright 2018, Springer Nature.…”

Section: Electric‐field Control Of Antiferromagnetic Spintronic Devicesmentioning

confidence: 99%

Electric‐Field‐Controlled Antiferromagnetic Spintronic Devices

et al. 2020

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“…Zero bias conductance verses magnetic field for a bilayer CrI 3 (lower panel) . D, RMCD signal mapping verses back gate and top gate voltage for gated bilayer CrI 3 device . E, Doping density‐magnetic field phase diagram at 4 K. The left axis is the gate voltage and the right axis denotes the gate‐induced doping density n …”

Section: Progress On Van Der Waals Magnets and Heterostructuresmentioning

confidence: 99%

“…Heterostructures and devices based on 2D‐vdW magnets are expected to possess a great variety of properties with strong application potential. Notable examples include the giant magnetoresistance and spin‐filtering phenomena in 2D spin‐valves and tunnel junctions …”

Section: Introductionmentioning

confidence: 99%

Van der Waals magnets: Wonder building blocks for two‐dimensional spintronics?

Zhang

Wong

Zhu

et al. 2019

InfoMat

107

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The unprecedented realization of two‐dimensional (2D) van der Waals magnets excitingly extends the synergy between spintronics and 2D materials, started with graphene over the last decade. This article reviews the recent milestones in the development of 2D magnets and its derived heterostructures. In particular, a number of critical challenges centered around the scalability, ambient stability and Curie temperature of these atomically thin magnets are discussed. This mini‐review also provides an outlook on what the future might hold for this integrated field of 2D spintronics, and assesses its potential in postsilicon electronics.

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“…[24] Also, it may be interesting to point out that the saturation field for the weak magnetization of the "undoped" MoTe 2 is very similar to that of the V-doped sample, possibly suggesting that the magnetization has the same origin. Recent developments in the control of magnetism in 2D materials by electric field [34] may also enable modifying the magnetic properties in the V:MoTe 2 system by external stimuli, and this may also be a way to gain better fundamental understanding of the magnetic exchange coupling in this material, specifically to get insights into the potential role of charge carriers. However, further tests such as field effect gating would be required to study the role of charge carriers in this system.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Room‐Temperature Ferromagnetism in MoTe₂ by Post‐Growth Incorporation of Vanadium Impurities

Coelho

Komsa

Lasek

et al. 2019

Adv Elect Materials

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potentially to exploit them in spintronics applications. Such potential applications of magnetic vdW materials have recently sparked considerable interest in investigating magnetism of bulk ferromagnetic materials thinned to a single layer [1][2][3][4] or the emergence of ferromagnetism of paramagnetic bulk materials at the monolayer limit. [5,6] In addition, defect-and dopant-induced ferromagnetism has been predicted theoretically. [7][8][9][10][11][12] Recent experimental results suggest that 1T-2H phase boundaries in MoSe 2 , [13][14][15] edges in WS 2 or MoS 2 , [16][17][18][19] adsorbate induced defect states, [20] or substitutional doping of transition metals in 2D materials [21][22][23] can result in defect-or dopant-induced ferromagnetic ordering in these systems. Recently, long-range magnetic order has also been observed in both MoTe 2 and MoSe 2 , which has been suggested to be induced by intrinsic ferromagnetic defects, such as Mo antisites, that is, Mo atoms at chalcogen lattice sites. [24] This indicates that in these materials even dilute defects can cause long-range ferromagnetic ordering, making them promising diluted magnetic semiconductor (DMS) materials. Here, we investigate a new doping mechanism for 2H-MoTe 2 that enables altering the monolayer or surface layer of a MoTe 2 crystal with transition metal impurities. We have recently demonstrated that 2H-MoTe 2 and MoSe 2 can be modified by incorporation of transition metals into the host's interstitial site. [25] We have shown experimentally and by density functional theory (DFT) calculations that excess Mo atoms on MoTe 2 are energetically favored at interstitial sites as compared to adsorbed atoms at the surface. At elevated temperatures, these excess transition metal atoms are mobile and can undergo site-exchange with lattice Mo atoms. For high enough mobility (temperature), the interstitials rearrange into 1D Mo-rich crystal modifications, known as mirror twin grain boundaries. [26][27][28] These grain boundaries have shown no ferromagnetic properties. We demonstrate here, that this doping mechanism can also be expanded to other transition metals, in particular with the goal of inducing magnetism into MoTe 2 . Titanium or vanadium has been used as ferromagnetic dopants in diluted semiconductor systems [29,30] and thus, in this study we explore if V can be introduced into MoTe 2 interstitial Figure 4. Magnetization measurements of MoTe 2 with different V concentrations. a) M-H hysteresis loops taken at 10 K for MoTe 2 with 0.2, 0.3, and 0.8% of V coverage. The variation of the linear diamagnetic background is a consequence of different substrate thicknesses. b) Variation in magnetization saturation with the V concentration. c) Temperature dependences of H C and M S for the 0.8% V-doped sample. The error bars reflect the experimental uncertainty related to background noise. www.advancedsciencenews.com

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Electrical control of 2D magnetism in bilayer CrI3

Cited by 1,170 publications

References 33 publications

Electric‐Field‐Controlled Antiferromagnetic Spintronic Devices

Electric‐Field‐Controlled Antiferromagnetic Spintronic Devices

Van der Waals magnets: Wonder building blocks for two‐dimensional spintronics?

Room‐Temperature Ferromagnetism in MoTe₂ by Post‐Growth Incorporation of Vanadium Impurities

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Electrical control of 2D magnetism in bilayer CrI3

Cited by 1,170 publications

References 33 publications

Electric‐Field‐Controlled Antiferromagnetic Spintronic Devices

Electric‐Field‐Controlled Antiferromagnetic Spintronic Devices

Van der Waals magnets: Wonder building blocks for two‐dimensional spintronics?

Room‐Temperature Ferromagnetism in MoTe2 by Post‐Growth Incorporation of Vanadium Impurities

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Room‐Temperature Ferromagnetism in MoTe₂ by Post‐Growth Incorporation of Vanadium Impurities