Electrical control of magnetism in oxides

Abstract

This review article aims at illustrating the recent progresses in the electrical control of magnetism in oxides with profound physics and enormous potential applications. In the first part, we provide a comprehensive summary of the electrical control of magnetism in the classic multiferroic heterostructures and clarify their various mechanisms lying behind. The second part focuses on the novel route of electric double layer gating for driving a significantly electronic phase transition in magnetic oxides by a small voltage. The electric field applied on the ordinary dielectric oxide in the third part is used to control the magnetic phenomenon originated from the charge transfer and orbital reconstruction at the interface between dissimilar correlated oxides. At last, we analyze the challenges in electrical control of magnetism in oxides, both on mechanism and practical application, which would inspire more in-depth researches and advance the development in this field.

Ionic Gel Modulation of RKKY Interactions in Synthetic Anti‐Ferromagnetic Nanostructures for Low Power Wearable Spintronic Devices

“…The accumulated opposite charges form an electric double layer with ≈3 nm thickness . Consequently, the surface charge density n s dramatically achieves 10 15 cm −2 and can further lead to a strong interfacial E‐field . Figure is the resulting interesting interfacial phenomena.…”

“…The electrochemical windows for both Kapton and mica have been calibrated in Figure S2 (Supporting Information). We chose V g (4 V for Kapton, 3 V for mica) out of the electrochemical window because larger bias voltage has a larger charge density, which can be more effective for the modulation of RKKY interaction. Since the situation in electrochemical reaction region is rather complicated, we only considered positive V g as a simplification.…”

Quantitative Determination on Ionic‐Liquid‐Gating Control of Interfacial Magnetism

“…The RF (Radio Frequency)/microwave ME tunability (≈60 Oe), however, is limited in BFO systems . Furthermore, there are many reports on magnetism control using the interfacial charge effect in dielectric/magnetic heterostructures . Magnetic moment as well as surface magnetic anisotropy is effectively controlled by interfacial charge that fills the 3d orbital of magnetic ions at the interface .…”

“…In 2007, Weisheit et al first reported E‐field driven coercive field ( H c ) changes in (FePt or FePd)/electrolyte heterostructures with liquid gating, which proved the concept of E‐field stimulated carrier‐mediated ME coupling phenomenon . Further, the ionic‐liquid (IL) gating process under low V g (usually <3 V) has been investigated using a typical field‐effect transistor (FET) structure (see Figure a), which can be utilized in the E‐field driven magnetism.…”

“…IL gating modification is strongly related to both the electrostatic charge accumulation and the electrochemical reaction mechanism . First of all, we calibrated the electrochemical window of the [DEME] + [TFSI] − , with Au and Co as electrodes in inactive nitrogen gas protection at room temperature.…”