Electrical creation of spin accumulation in -type germanium

Saito, H.; Watanabe, S.; Mineno, Y.; Sharma, Sandeep; Jansen, R.; Yuasa, Shinji; Ando, Koji

doi:10.1016/j.ssc.2011.05.010

Cited by 75 publications

(122 citation statements)

References 26 publications

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“…2 In addition, its long spin coherence time is of great advantage for innovative spintronic devices. Recently the injection of a spin polarized current into Ge through a tunnel junction [3][4][5] has been successfully demonstrated. However, avoiding the insulating layer between the Ge and the ferromagnet (FM) will be required for the realization of gate-tunable spin devices.…”

Section: Introductionmentioning

confidence: 99%

Magnetic anisotropy in epitaxial Mn5Ge3films

et al. 2012

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Section: Introductionmentioning

confidence: 99%

Magnetic anisotropy in epitaxial Mn5Ge3films

et al. 2012

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“…The in-plane [3][4][5][6][7] TAMR refers to the change in tunnel resistance when the magnetization is rotated in the plane of the magnetic layer. On the other hand, out-of-plane 2,5,[8][9][10] TAMR refers to the change in tunneling resistance when the magnetization is rotated from in-plane to out-of-plane.…”

Section: Introductionmentioning

confidence: 99%

“…Although the TAMR effect may be small in magnitude in tunnel contacts with transition metal FMs, it may influence the spin injection from a FM into a semiconductor (SC). Therefore, to correctly interpret the results of spin injection into a SC, 7,10 it is essential to investigate the TAMR effect in tunnel contacts with a SC.…”

Section: Introductionmentioning

confidence: 99%

Anisotropy of spin polarization and spin accumulation in Si/Al2O3/ferromagnet tunnel devices

et al. 2012

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The contribution of the spin accumulation to tunneling anisotropy in Si/Al 2 O 3 /ferromagnet devices was investigated. Rotation of the magnetization of the ferromagnet from in-plane to perpendicular to the tunnel interface reveals a tunneling anisotropy that depends on the type of the ferromagnet (Fe or Ni) and on the doping of the Si (n or p type). Analysis shows that different contributions to the anisotropy coexist. Besides the regular tunneling anisotropic magnetoresistance, we identify a contribution due to anisotropy of the tunnel spin polarization of the oxide/ferromagnet interface. This causes the spin accumulation to be anisotropic, i.e., dependent on the absolute orientation of the magnetization of the ferromagnet.

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“…[23][24][25] as well as into Ge through MgO. [26][27][28][29][30][31][32][33][34] Among the latest experiments, the transformation of a spin-polarized electron current into left-or righthanded circularly polarized light in a spin light-emitting diode (spin LED) integrating a III-V semiconductor heterostructure 8,11,[13][14][15][16][17]19,23,34,35 is one of the most striking physical phenomena. The electric dipolar selection rules involved in a quantum well 36 (QW) embedded in a spin LED during electron-hole recombination require spin injection with an out-of-plane magnetization.…”

Section: Introductionmentioning

confidence: 99%

Spin injection at remanence into III-V spin light-emitting diodes using (Co/Pt) ferromagnetic injectors

et al. 2012

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We have studied the perpendicular magnetic anisotropy of Co/Pt multilayers and the electron spin injection efficiency by optical spectroscopy from a [Co(0.6 nm)/Pt(1 nm)] 4 /Fe(0.3 nm)/MgO perpendicular tunnel spin injector grown on AlGaAs/GaAs semiconductor light-emitting diodes. We observe a 2.5% circular polarization at low temperature close to the magnetic remanence when the 0.3 nm Fe film of the ferromagnetic injector is sufficiently thin to maintain the magnetization out of plane. The acquired squared magnetization cycle is explained by the remaining interlayer exchange coupling existing between Fe and the (Co/Pt) multilayer through Pt or possible perpendicular magnetic anisotropy at the MgO/Fe interface. The corresponding spin polarization of the current is then estimated as 7%, measured by photoluminescence techniques, after the necessary uprenormalization, taking into account the electron spin-flip rate in the quantum well. In contrast, no circular polarization is observed when the thin Fe layer is removed and despite the rather high magnetic polarizability of the 5d 9 electronic open shell of Pt at the interface with MgO. This emphasizes the reduced size of tunneling branching of wave functions at the interface, of the order of the atomic plane unit.

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Electrical creation of spin accumulation in -type germanium

Cited by 75 publications

References 26 publications

Magnetic anisotropy in epitaxial Mn5Ge3films

Magnetic anisotropy in epitaxial Mn5Ge3films

Anisotropy of spin polarization and spin accumulation in Si/Al2O3/ferromagnet tunnel devices

Spin injection at remanence into III-V spin light-emitting diodes using (Co/Pt) ferromagnetic injectors

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