Electrical effects of dislocations and other crystallographic defects in Hg0.78Cd0.22Te n-on-p photodiodes

List, R. S.

doi:10.1007/bf02817519

Cited by 41 publications

(3 citation statements)

References 7 publications

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“…While such a fast protocol is capable of producing some crystals of high transparency, it has been shown more recently that decreasing the crystal growth kinetics would be more favorable to improving the optoelectronic properties . Indeed, single crystals with no visible defects can still contain significant amounts of structural defects such as dislocations which were found to be detrimental to charge carrier transport properties in the case of conventional inorganic semiconductors such as Si, Ge, GaAs, or CdTe. − By extension, these defects may be one potential root cause of the variability in mobility values reported in the literature for a given HOIP compound (Table S1). In this context, it is of paramount importance to define a robust and reproducible growth protocol leading to HOIP single crystals with low number of structural defects.…”

Section: Introductionmentioning

confidence: 99%

Optimization of the Growth Conditions for High Quality CH₃NH₃PbBr₃ Hybrid Perovskite Single Crystals

Amari

Verilhac

d’Aillon

et al. 2020

Crystal Growth & Design

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Methylammonium lead tribromide (CH3NH3PbBr3) single crystals has gained a growing attention in the past few years due to their use as model material to investigate relevant intrinsic perovskite properties, and for their potential applications for radiation detection. Their study has been facilitated by the ease and speed of fabrication of millimetric single crystals through a simple protocol of unseeded Inverse Temperature Crystallization (ITC). In this study, we show that such growing conditions suffer from both insufficient reproducibility regarding crystal quality and

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Section: Introductionmentioning

confidence: 99%

Optimization of the Growth Conditions for High Quality CH₃NH₃PbBr₃ Hybrid Perovskite Single Crystals

Amari

Verilhac

d’Aillon

et al. 2020

Crystal Growth & Design

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“…This scheme has been successful for short-wave infrared (SWIR) and MWIR FPAs, but it is believed that further reduction in dislocation density, by at least an order of magnitude, is needed for high-performance LWIR HgCdTe FPAs. [4][5][6] In addition, the thermal mismatch between the HgCdTe film and the Si substrate during growth and subsequent device processing is of significant concern. 7, 8 The physical properties of InSb suggest a nearly ideal, alternative substrate for HgCdTe heteroepitaxy.…”

Section: Introductionmentioning

confidence: 99%

Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors

Jaime-Vasquez

Martinka

Stoltz

et al. 2008

Journal of Elec Materi

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Plasma etching of (112)B InSb to prepare this semiconductor for the heteroepitaxy deposition of CdTe and initial studies of CdTe epilayers grown by molecular beam epitaxy (MBE) on InSb (112)B substrates cleaned with various plasma treatments are presented. X-ray diffraction rocking curve maps of the MBE CdTe epilayers on 3-inch InSb (112)B substrates have full-width at half-maxima (FWHM) values in the range of 20 arcsec to 30 arcsec. An etch pit density analysis of the 3-inch CdTe epilayers reveals a defect density of 1.0 · 10 7 cm -2 and 7.7 · 10 5 cm -2 at the center and edge of the wafer, respectively. Evaluation of a standard HgCdTe annealing process suggests that the removal of the InSb substrate is likely to be needed prior to any postgrowth annealing in Hg overpressure. Finally, we present a low-energy helium plasma exposure of wet-etched InSb (112)B substrates that provides a uniform epi-ready surface that is nearly stoichiometric, and free of oxide and residual contaminants.

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“…[1][2][3][4][5][6][7][8][9] Dislocations threading from the growth substrate and misfits from epitaxial interfaces can all contribute leakage currents that degrade diode performance. For VLWIR FPAs operating at 40 K, dislocations can be major causes of pixel outages.…”

Section: Introductionmentioning

confidence: 99%

Effect of Dislocations on VLWIR HgCdTe Photodiodes

Parodos

Fitzgerald

Caster

et al. 2007

Journal of Elec Materi

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The effects of dislocations on very-long-wavelength infrared (VLWIR) HgCdTe photodiodes (cutoff wavelength >14 lm at 40 K) have been determined experimentally and analyzed. The photodiodes are in the back-illuminated configuration, fabricated from HgCdTe p-on-n double-layer heterostructure (DLHJ) films grown at BAE Systems by liquid phase epitaxy (LPE) onto lattice-matched (111) CdZnTe substrates. Arrays were hybridized to silicon ROICs to form focal plane arrays (FPAs). After characterization for dark current and response, the arrays were dehybridized and stripped of their metals and passivation layers. Dislocations were revealed using a Hä hnert and Schenk (H&S) etch. Pixel traceability was maintained throughout the analysis, permitting one-to-one correlation between photodiode performance and dislocation density measured within that photodiode. We found that response and dark current were correlated to etch pit density (EPD), which we assumed to be equal to dislocation density. Our results support earlier dislocation studies on larger-bandgap HgCdTe, which showed response was only weakly impacted by EPD, while dark current was strongly affected by EPD. Measured EPD values ranged from low 10 5 to low 10 7 cm -2 . Potential causes for this range in EPD are discussed.

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Electrical effects of dislocations and other crystallographic defects in Hg0.78Cd0.22Te n-on-p photodiodes

Cited by 41 publications

References 7 publications

Optimization of the Growth Conditions for High Quality CH₃NH₃PbBr₃ Hybrid Perovskite Single Crystals

Optimization of the Growth Conditions for High Quality CH₃NH₃PbBr₃ Hybrid Perovskite Single Crystals

Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors

Effect of Dislocations on VLWIR HgCdTe Photodiodes

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Electrical effects of dislocations and other crystallographic defects in Hg0.78Cd0.22Te n-on-p photodiodes

Cited by 41 publications

References 7 publications

Optimization of the Growth Conditions for High Quality CH3NH3PbBr3 Hybrid Perovskite Single Crystals

Optimization of the Growth Conditions for High Quality CH3NH3PbBr3 Hybrid Perovskite Single Crystals

Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors

Effect of Dislocations on VLWIR HgCdTe Photodiodes

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Optimization of the Growth Conditions for High Quality CH₃NH₃PbBr₃ Hybrid Perovskite Single Crystals

Optimization of the Growth Conditions for High Quality CH₃NH₃PbBr₃ Hybrid Perovskite Single Crystals