Electrical engineering of the optical properties in silicene

Bao, Hairui; Jun-ji, Guo; Liao, Wenhu; Zhao, Heping

doi:10.1007/s00339-014-8837-x

Cited by 6 publications

(8 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One notes that all the observed optical transitions for metallic 11-ASiNR come from the different indexed valence and conduction subbands, [31] while the A / M and A / C absorptions of the semiconducting 9-and 10-ASiNRs should owe to the same indexed subbands. It seems that the semiconducting 9-/10-ASiNRs are more sensitive to external electromagnetic field [33,34,36] than metallic 11-ASiNR within the infrared to visible energy range.…”

Section: Resultsmentioning

confidence: 98%

“…According to the intersubband-transition theorem [33,34,36] for semiconductors, the imaginary dielectric function e 2 ðxÞ for N-ASiNR irradiated by an external electromagnetic field with photon energy hx (as denoted by the wave arrows in Fig. 1) can be expressed as…”

Section: Model and Formulismmentioning

confidence: 99%

“…Furthermore, the real part of the dielectric function can be calculated from the Kramers-Krönig relation [33,34,36] as…”

Section: Model and Formulismmentioning

confidence: 99%

“…1) at low temperatures are demonstrated from the dipole-transition theorem [33][34][35][36] for semiconductors. The dipole transitions [38,39] from the valence subbands to the smaller indexed conduction ones for 9-, 10-, and 11-ASiNRs have been found to increase continually, while those to the larger indexed conduction subbands increase firstly and then decrease.…”

Section: Introductionmentioning

confidence: 97%

“…The surface differential optical spectra of a complete self-assembled Si nanoribbon layer on silver have been experimentally [32] demonstrated to be much different from those of a silicene monolayer. The width-dependent electronic structure and optical response for ASiNRs make it more attractive in future silicene-based nanoscale optoelectronic devices, [33][34][35][36]; we address these significant issues in the present work.…”

Section: Introductionmentioning

confidence: 98%

See 4 more Smart Citations

Infrared to ultraviolet optical response for armchair-edge silicene nanoribbons

et al. 2016

Self Cite

View full text Add to dashboard Cite

We investigate the infrared to ultraviolet optical response for perfect armchair-edge silicene nanoribbons (N-ASiNRs) with N atomic chains under the irradiation of an external electromagnetic field at low temperatures, in the method of dipole-transition theorem for semiconductors. The electronic structure for N-ASiNRs has been manifested from the tight-binding calculations to two distinct families, that is the semiconducting one for N ¼ 3l or 3l þ 1 (l is a positive integer) and metallic one for N ¼ 3l þ 2. The dipole-transition probabilities from the valence subbands to the smaller indexed conduction ones for semiconducting 9-/10-and metallic 11-ASiNRs have been demonstrated to be continuously increasing, while those to the larger indexed conduction subbands are firstly increasing and then decreasing. Both the semiconducting 9-/10-and metallic 11-ASiNRs have been found to have a wide (from 0.50 to 3.20 eV) absorption spectrum, refractive index, and extinction coefficient at the vicinity of Kpoint. The optical response for semiconducting 9-/10-ASiNRs is observed to be from the transitions between the valence and conduction subbands with the same and/or different indices, while that for metallic 11-ASiNR may be originated from the different indexed valence and conduction subbands. The obtained results are believed to be of importance in the design of the silicene-based nanooptoelectronic devices.

show abstract