Physical Properties of Silicene

Voon, L. C. Lew Yan

doi:10.1007/978-3-319-28344-9_1

Cited by 11 publications

(2 citation statements)

References 143 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Silicene is a relatively new 2D material, and was first synthesized on supported substrates in a series of discovery since 2007 [2]. Following the successful synthesis of silicene on supported substrate, many theoretical studies and simulations on the structural, mechanical, electronic and thermal properties of silicene on supported substrate have been published [6].…”

Section: Introductionmentioning

confidence: 99%

Molecular dynamics simulation of melting of silicene

Min

Yoon

Lim

2018

Mater. Res. Express

View full text Add to dashboard Cite

We report the melting temperature of free-standing silicene by carrying out molecular dynamics (MD) simulation experiments using optimized Stillinger-Weber (SW) potential by Zhang et al. [11]. The melting scenario of a free-standing silicene is well captured visually in our MD simulations. The data are systematically analyzed using a few qualitatively different indicators, including caloric curve, radial distribution function and a numerical indicator known as global similarity index. The optimized SW potential consistently yields a melting temperature of 1500 K for the simulated free-standing, infinite silicene.

show abstract

Section: Introductionmentioning

confidence: 99%

Molecular dynamics simulation of melting of silicene

Min

Yoon

Lim

2018

Mater. Res. Express

View full text Add to dashboard Cite

show abstract

“…ilicene, a low-buckled monolayer honeycomb lattice of silicon atoms, has been synthesized on the surface of various substrates such as Ag(111), Ir(111), and ZrB 2 (0001), [1][2][3][4][5] and has attracted extensive attention both theoretically 6,7) and experimentally. 1,8) The low-buckled structure gives rise to relatively large spin-orbit coupling (SOC) and a sizable gap of 1.55 meV at the Dirac points, K and KA.…”

mentioning

confidence: 99%

Spin and valley filter across line defect in silicene

Wang

Ren

et al. 2018

Appl. Phys. Express

View full text Add to dashboard Cite

We propose a new scheme to achieve an effective spin/valley filter in silicene with extended line defect on the basis of spin-valley coupling due to the intrinsic spin-orbit coupling (SOC). The transmission coefficient of the spin/valley states is seriously affected by the SOC. When a perpendicular magnetic field is applied on one side of the line defect, one valley state will experience backscattering, but the other valley will not; this leads to high valley polarization in all transmission directions. Moreover, the spin/valley polarization can be enhanced to 96% with the aid of a perpendicular electric field.

show abstract

Role of interfacial layer as PANI–silicene in Si-based photodiodes

Kocyigit,

Yıldız,

Taşaltın

et al. 2024

J Mater Sci

View full text Add to dashboard Cite

Silicene is a 2D monoatomic sheet of silicon and can be used for various applications such as degradation, therapy, and biosafety. Polyaniline (PANI) is a conducting polymer employed for electronic devices. In this study, we synthesized PANI–silicene composites and operated as an external interfacial layer between Al and different type substrates of p-Si and n-Si to compare Schottky-type photodiodes of PANI–silicene/n-Si and PANI–silicene/p-Si. The silicene structures were investigated using X-ray diffractometry (XRD) and scanning electron microscopy (SEM) techniques. Also, the light power intensity dependent of PANI–silicene/n-Si and PANI–silicene/p-Si photodiodes carried out in the range 0–100 mW/cm2 and I–t measurements utilized to determine the response time of the photodiodes. Basic parameters of devices such as ideality factors barrier, height, and series resistance were obtained by Norde and Cheung methods and thermionic emission (TE) theory from I–V graphs. While the PANI–silicene/n-Si exhibited high ideality factor values of 5.49, the PANI–silicene/p-Si photodiodes showed a low ideality factor of 1.48. The photodiode parameters such as detectivity and responsivity were calculated as 6.40 × 109 Jones and 38.9 mA/W for n-Si substrate and 78.2 mA/W and 8.81 × 109 Jones for p-Si substrate. The case of basic electrical properties for PANI–silicene composite interlayer-based photodiodes was analyzed in detail.

show abstract

Physical Properties of Silicene

Cited by 11 publications

References 143 publications

Molecular dynamics simulation of melting of silicene

Molecular dynamics simulation of melting of silicene

Spin and valley filter across line defect in silicene

Role of interfacial layer as PANI–silicene in Si-based photodiodes

Contact Info

Product

Resources

About