Electrical excitation and charge-state conversion of silicon vacancy color centers in single-crystal diamond membranes

Abstract

The silicon-vacancy (SiV) color center in diamond has recently emerged as a promising qubit for quantum photonics. However, the electrical control and excitation of the SiV centers are challenging due to the low density of free carriers in doped diamond. Here, we realize electrical excitation of SiV centers in a single-crystal diamond membrane, which is promising for scalable photonic architectures. We further demonstrate electrical switching of the charge states of the SiV centers by applying a forward bias voltage to the fabricated diamond-membrane devices and identify the position of the SiV−/SiV0 charge transition level. Our findings provide a perspective toward electrical triggering of color centers in diamond and accelerate the development of scalable quantum nanophotonic technologies.

Single-Photon Sources Based on Novel Color Centers in Silicon Carbide P–I–N Diodes: Combining Theory and Experiment

“…The charge state of the color center at position ( x , y ) is determined by the position of the Fermi level at point ( x , y ) with respect to the energy level of the ground state of the color center (Fig. 6 a, b) [ 52 – 56 ]. The occupation of the (− 1) charge state in a single-electron approximation is given by [ 52 ]: where g 0 and g 1 are the degeneracy factors of the (0) and (− 1) charge states, respectively, F is the Fermi level in 4H-SiC in the vicinity of the color center, E − ground is the ground level of the color center in the (− 1) charge state, and kT is the thermal energy.…”

“…The charge state of the color center at position (x, y) is determined by the position of the Fermi level at point (x, y) with respect to the energy level of the ground state of the color center (Fig. 6a, b) [52][53][54][55][56]. The occupation of the (− 1) charge state in a single-electron approximation is given by [52]:…”

“…6a, b) [52][53][54][55][56]. The occupation of the (− 1) charge state in a single-electron approximation is given by [52]:…”

“…2a, b depends on the ionization energy of the color center. Additional studies of the photoluminescence properties of the considered color center under negative bias voltages [52][53][54][55][56] or studies of color centers of the same type located in the p + -type region, n + -type region, and in the n − -region near the n − -n + junction are required to find from which charge state the color center emits. Nevertheless, we should note that it is very unlikely that in 4H-SiC, which has a bandgap energy of 3.23 eV, the (0|− 1) charge state transition level is as close to the conduction band edge as 0.5 eV.…”

A metasurface-based diamond frequency converter using plasmonic nanogap resonators

“…The unique properties of diamond such as a superior thermal conductivity, a high index of refraction, an ultrawide transparency window and negligible birefringence [1][2][3] have made this material a promising platform for nanophotonics both in the classical [4][5][6][7] and quantum regimes [8][9][10][11][12][13][14]. Additionally, with its relatively high third-order nonlinear susceptibility (χ (3) ), diamond is an appealing candidate for integrated nonlinear devices.…”