Electrical fluctuations and photoinduced current transients in CdxHg1−xTe long wavelength epilayers

Paul, Nichols; Vliet, Carolyne M Van; Mergui, S.

doi:10.1063/1.370671

Cited by 10 publications

(4 citation statements)

References 4 publications

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“…/ can be used to estimate ΔE T and σ from f c (T) data. This formula was used to determine trap energies in various devices and materials, e.g., by Scholz et al [5], Kleinpenning et al [19], and Paul et al [20]. The trap energies ΔE T , and the capture cross-sections obtained with equation (5) for our samples are listed in table 1.…”

Section: ( -) mentioning

confidence: 99%

Investigation of trap levels in HgCdTe IR detectors through low frequency noise spectroscopy

Ciura

Kolek

Kębłowski

et al. 2016

Semicond. Sci. Technol.

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Low frequency noise spectroscopy is a valuable tool for studying narrow gap semiconductor materials and devices. In the paper, the method of traps investigation with low frequency noise spectroscopy was presented, together with quantitative analysis of the results obtained for highoperating-temperature, fast response, Hg 1−x Cd x Te mid-wavelength infrared detectors. The hole trap levels in these devices are Cd-content independent and take the value E T ≅140 meV or E T ≅40 meV. The level at E T ≅140 meV was found for almost all tested detectors. The level around E T =40 meV was found in two samples. Apart from the hole traps, three electron traps were also found. Their energy levels follow the trend lines E T =0.35E g (x) and E T =0.75E g (x). All trap energies are consistent with the results reported in the literature for Hg 1−x Cd x Te devices.

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Section: ( -) mentioning

confidence: 99%

Investigation of trap levels in HgCdTe IR detectors through low frequency noise spectroscopy

Ciura

Kolek

Kębłowski

et al. 2016

Semicond. Sci. Technol.

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“…Now, if we take ␥ϭ2, N te /Nϭ0.25, and log( 2 / 1 ) ϭ6, we get ␣ H ϭ2ϫ10 Ϫ3 , i.e., the value usually observed in conducting channels with the predominant surface mechanism of the noise. 16,18,21 Another important consequence of the Coulomb correlations is the prediction of a nonmonotonic dependence of noise spectrum ͑61͒ on the concentration of trapped electrons N te . This can be seen by analyzing the Hooge parameter ␣ H as a function of N te .…”

Section: A Traps Uniformly Distributed Over the Layermentioning

confidence: 99%

Theory of surface noise under Coulomb correlations between carriers and surface states

Kochelap

Sokolov

Bulashenko

et al. 2002

Journal of Applied Physics

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We present a theory of the surface noise in a nonhomogeneous conductive channel adjacent to an insulating layer. The theory is based on the Langevin approach which accounts for the microscopic sources of fluctuations originated from trapping-detrapping processes at the interface and intrachannel electron scattering. The general formulas for the fluctuations of the electron concentration, electric field as well as the current-noise spectral density have been derived. We show that due to the self-consistent electrostatic interaction, the current noise originating from different regions of the conductive channel appears to be spatially correlated on the length scale correspondent to the Debye screening length in the channel. The expression for the Hooge parameter for 1/f noise, modified by the presence of Coulomb interactions, has been derived.

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“…The current noise in the low-frequency region is always dominated by the 1=f noise, whose spectrum occasionally shows bumps or shoulders. [1][2][3][4][5][6] The shoulder is usually attributed to charging and discharging of the electron trap, which often correlates with the reliability of the device. 7,8) In general, the shoulder of the noise spectrum emerges from discrete charge events, which exhibit a Lorentzian noise spectrum.…”

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confidence: 99%

Analytical derivation of charge relaxation time distribution in transistor from current noise spectrum using inverse integral transformation method

Yatabe

Inoué

Asubar

et al. 2018

Appl. Phys. Express

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An analytical technique is proposed to reveal the relaxation time distribution of dynamic charge events using the current noise spectrum of a transistor, by applying an inverse integral transformation to the McWhorter model. In the proposed method, the continuous relaxation-time distribution function G(τ) can be analytically derived from the noise spectra S(ω) without a spectrum deconvolution. The feasibility of the proposed method is demonstrated by characterizing the charge dynamics of tetraphenylporphyrin molecules dispersed on the surface of a GaAs-based nanowire field-effect transistor. Our analysis successfully verified the time constant of the molecule-related dynamic charge events and effects of photo-excitation.

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Electrical fluctuations and photoinduced current transients in CdxHg1−xTe long wavelength epilayers

Cited by 10 publications

References 4 publications

Investigation of trap levels in HgCdTe IR detectors through low frequency noise spectroscopy

Investigation of trap levels in HgCdTe IR detectors through low frequency noise spectroscopy

Theory of surface noise under Coulomb correlations between carriers and surface states

Analytical derivation of charge relaxation time distribution in transistor from current noise spectrum using inverse integral transformation method

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