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Measurements are described of I-V characteristics, resistance versus T−1, noise spectra and photoresponse for frequencies of 10 Hz-1 MHz in the temperature range 300–50 K for cadmium-mercury telluride long-wavelength infrared detectors having 12μ epitaxial layers on wide band gap material. The noise consists of 1/f noise and one or two Lorentzians, attributed to shallow hole traps, probably associated with Hg vacancies. The results are discussed and analyzed after a brief resume of generation-recombination noise. The photoinduced current transient spectroscopy response curves are attributed to tunneling to interface states.