Compensation origins in II–VI CZT materials

Zumbiehl, A.; Mergui, S.; Ayoub, M.; Hage‐Ali, M.; Zerrai, A.; Cherkaoui, Karim; Marrakchi, G.; Darici, Yesim

doi:10.1016/s0921-5107(99)00394-3

Cited by 22 publications

(7 citation statements)

References 12 publications

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“…In fact, for single-crystalline ZnTe NRs, the dopant concentration of N element is limited because of the compensation effect. 11,12,18 In our experiments, when the NH 3 concentration increases up to 20%, the N-doped effect can be found to be close to the limitation and the carrier concentration might reach the maximum value. All the electrical measurements based on both intrinsic and different N-doped degree ZnTe NRs demonstrated that N-doping led to a substantial enhancement in p-type conductivity of ZnTe NRs.…”

Section: Resultssupporting

confidence: 59%

“…However, most II-VI nanostructures show n-type conductivity and p-type doping that is hard to realize because of the strong self-compensation effects. 1,[8][9][10][11][12] Thus far, initial studies on the p-type doping of ZnO, [13][14][15] ZnS, 16 and ZnSe 17 NWs/NRs have been reported representing an exciting progress toward II-VI nanodevices. Nevertheless, the p-type doping remains a large challenge, and more experiments are needed to further develop the p-type conductivity of II-VI nanostructures in terms of doping efficiency, reliability, and reproducibility.…”

Section: Introductionmentioning

confidence: 99%

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Enhanced p-Type Conductivity of ZnTe Nanoribbons by Nitrogen Doping

Jiang

et al. 2010

J. Phys. Chem. C

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Single-crystalline intrinsic and N-doped p-type ZnTe nanoribbons (NRs) were synthesized via the thermal evaporation method in argon-mixed hydrogen and nitrogen-mixed ammonia, respectively. Both intrinsic and doped ZnTe nanoribbons had zinc blende structure and uniform geometry. X-ray diffraction peaks of N-doped ZnTe nanoribbons had an obvious shift toward higher angle direction as compared with intrinsic ZnTe. X-ray photoelectron spectroscopy detection confirmed that the dopant content of nitrogen in ZnTe nanoribbons was close to 1%. Field-effect transistors based on both intrinsic and N-doped ZnTe nanoribbons were constructed. Electrical measurements demonstrated that N-doping led to a substantial enhancement in p-type conductivity of ZnTe nanoribbons with a high hole mobility of 1.2 cm−2 V−1 S−1 and a low resistivity of 0.14 Ω cm in contrast to the 6.2 × 10−3 cm−2 V−1 S−1 and 45.1 Ω cm for intrinsic nanoribbons. Moreover, the defect reaction mechanism was proposed to explain the p-type behaviors of both the intrinsic and the N-doped ZnTe nanoribbons.The ZnTe nanoribbons with enhanced p-type conductivity may have important potential applications in nanoelectronic and optoelectronic devices.

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Section: Resultssupporting

confidence: 59%

Section: Introductionmentioning

confidence: 99%

Enhanced p-Type Conductivity of ZnTe Nanoribbons by Nitrogen Doping

Jiang

et al. 2010

J. Phys. Chem. C

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“…9, we can see the PICTS spectra under different static transversal pressures. At 0 , we can see the electrical compensation equilibrium between the 0.14 and the 0.96 eV bands [10]. At 1 , the situation is reversed in favor of the 0.14 eV associated to an increase of the 0.4-0.5 eV band and a decrease of the resistivity.…”

Section: Electrical Studies 1) Picts Measurements Results and DImentioning

confidence: 90%

CdTe nuclear detector electroless contact Studies-new results on contact structures, interfaces, and stress

Ali¹,

Ayoub²,

Lmai³

et al. 2004

IEEE Trans. Nucl. Sci.

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Although electroless contacts are the most used contacts on II-VI semiconductor materials (CdTe family) to solve many problems, they are difficult to understand and to control. For this paper, we have chosen two II-VI materials, CdTe and ZnTe, and three metals: Au, Pt, and Pd. For the characterization methods, we have chosen Rutherford backscattering (RBS), secondary ions mass spectroscopy (SIMS), and partially Auger for the contacts and interface structures, stoechiometry, and composition profiles. Electrical measurements, PICTS and TEES, are done to find out defect level concentrations and nature, as well as the possible correlation with the composition concentrations. As first parameter change, we have chosen the solution dilution in the electroless deposition process, while the other parameters were frozen. This allows us to drive and to see a drastic variation in the profile of the metal, the two constituent materials and the oxygen in the metal layer. The same has been seen at the interface where the V Cd concentration profile shows sensible variation too.We have found a clear connection with specific electrical defect concentrations. The validity of these concentration measurements in the bulk are then subject to questions. The comparison with evaporated contacts is done for bulk and surface property separations. Contact induced stress is simulated by static pressure in longitudinal and transversal direction. We have driven out the induced defect natures and concentrations. The limit of operation under stress is also given.

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“…Previous authors [29,30]have simulated a set of 3 acceptor energies and one or two deep donors, based on experimental data and the supposed physical origins of traps [28,31]. The mechanism by which a deep donor compensates for acceptors involves Fermi level 'pinning' [26].…”

Section: Modelling Realistic Resistivitymentioning

confidence: 99%

Charge transport optimization in CZT ring-drift detectors

Boothman¹,

Alruhaili²,

Veeramani³

et al. 2015

J. Phys. D: Appl. Phys.

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Abstract. Ring-Drift design has been applied to large (7.5mm×7.5mm×2.3mm) Cadmium Zinc Telluride (CZT) devices. This low-noise, single-carrier-sensing configuration is the gold standard for spectroscopic silicon X-ray detectors. By combining the advantages of Ring-Drift with the high quantum efficiency and room-temperature operating capabilities of CZT, a simple and compact device for high-resolution spectroscopy of X-rays in the range 50-500keV can be created. Quality of CZT crystals has improved greatly in recent years and electron-only sensing overcomes the problem of inherently poor hole transport in II-VI semiconductors.The spatial response of our 3-ring CZT device was studied by microbeam scanning while the voltages applied to all electrodes were systematically varied. Maximum active radius extended to 2.3mm, beyond the second ring. Resolution was limited by electronic noise. Our results show that the lateral field and its ratio to the bulk field exert a crucial influence on active area, peak position and sensitivity. CZT and the device geometry were modelled in 3D with Sentaurus TCAD. Line scans were simulated and trends in performance with bias conditions matched experimental data, validating the model. We aimed to optimise the resolution, sensitivity and active radius of the device. Fields and charge drift were visualised and the active volume was mapped in 3D to improve understanding of the factors governing performance including number of rings, their widths, positions and bias.

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Compensation origins in II–VI CZT materials

Cited by 22 publications

References 12 publications

Enhanced p-Type Conductivity of ZnTe Nanoribbons by Nitrogen Doping

Enhanced p-Type Conductivity of ZnTe Nanoribbons by Nitrogen Doping

CdTe nuclear detector electroless contact Studies-new results on contact structures, interfaces, and stress

Charge transport optimization in CZT ring-drift detectors

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