Microscopic defect level characterization of semi-insulating compound semiconductors by TSC and PICTS

Hage‐Ali, M.; Yaacoub, B.; Mergui, S.; Samimi, Mohsen; Biglari, B.; Siffert, P.

doi:10.1016/0169-4332(91)90202-u

Cited by 11 publications

(5 citation statements)

References 7 publications

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“…The association of chlorine with this band of defects is supported by our results which reveals that this defect band is detectable only in the present samples, but not in any of the samples deposited from Cl-free solutions [6]. It should be noted that Cu can also behave as an acceptor with ionization energy of 0.30 to 0.35 eV, by substitution into Cd sites [16,17]. The result of our measurements on Cu-doped CdTe, electrodeposited from a Cl-free solution (not reported here) has revealed a distinct hole trap at E v 0:30 eV with s 4 Â 10 À21 cm 2 .…”

Section: Films Deposited At 85 C/ð580 MVsupporting

confidence: 73%

“…In the order of shifting to right, e m 96, 144 and 482 s À1 for these curves. The annealed sample did not yield a PICTS spectrum with À0:5 V Copper can create complexes with native defects and/or chlorine, giving rise to a band of defect levels extending from 0.11 to 0.23 eV, which leads to self-compensation of the material [16,17]. An acceptor level at E v 0:15 eV has also been detected in a Cl-doped single crystal (p-type) of CdTe [18].…”

Section: Films Deposited At 85 C/ð580 MVmentioning

confidence: 90%

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Detailed Study of Bandgap Energy Levels in CdTe Films Electrodeposited from Chlorine-Containing Solutions

Rakhshani

Makdisi

2000

phys. stat. sol. (a)

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Thin films of CdTe are electrodeposited at different temperatures and potentials on stainless steel foil substrates from a 1M CdSO 4 solution containing chlorine (0.03 to 0.06 M). Current±voltage, conductivity±temperature and photoinduced current transient spectroscopy measurements have been performed on devices formed by evaporation of semitransparent Au electrodes on CdTe. The bandgap energy levels in these films have a distinctly different spectrum compared to films deposited from Cl-free solutions. In addition to some deep hole levels which can also exist in Cl-free films, a range of shallow hole traps (within 0.4 eV from the valence band edge) have been measured and their origins have been identified. The influence of these shallow hole traps on the charge transport mechanism and the activation energy of conductivity is discussed.

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Section: Films Deposited At 85 C/ð580 MVsupporting

confidence: 73%

Section: Films Deposited At 85 C/ð580 MVmentioning

confidence: 90%

Detailed Study of Bandgap Energy Levels in CdTe Films Electrodeposited from Chlorine-Containing Solutions

Rakhshani

Makdisi

2000

phys. stat. sol. (a)

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“…The result of our measurements on Cu-doped CdTe, electrodeposited from Cl-free solutions (not reported here) has revealed a distinct hole trap at E v + 0.30 eV with σ = 4 × 10 −21 cm 2 . It has been demonstrated that Cu can also create complexes with native defects and/or chlorine, giving rise to a band of defect levels 0.11-0.23 eV above E v , which leads to self-compensation of the material [28,29]. The association of chlorine with this band of defects is supported by the fact that this defect band was detected only in the present samples but not in any of the samples deposited from Cl-free solutions [11].…”

Section: Bandgap Energy Levelssupporting

confidence: 49%

“…The energy, capture cross section and the type of trap in this sample is listed in table 2. The assignment of traps to trace impurities, native defects and their complexes was done based on the numerous published data in the literature, including [8,11,[24][25][26][27][28][29]. Peak A, in both runs, represents a shallow hole trap, probably due to a trace impurity such as Li, Na, P, N [8,24], oxygen [26] or/and a complex defect like Te 2− i /Cl + T e [27].…”

Section: Bandgap Energy Levelsmentioning

confidence: 99%

“…Peak C in run 2 can be assigned to Au, Ag or, most likely, to a Cu trace impurity [8]. Copper can behave as an acceptor with ionization energy of 0.30-0.35 eV, by substitution into Cd sites [28,29]. The result of our measurements on Cu-doped CdTe, electrodeposited from Cl-free solutions (not reported here) has revealed a distinct hole trap at E v + 0.30 eV with σ = 4 × 10 −21 cm 2 .…”

Section: Bandgap Energy Levelsmentioning

confidence: 99%

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CdTe films electrodeposited from chlorine-containing solutions

Rakhshani¹

1999

J. Phys.: Condens. Matter

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The diffusion-controlled electrodeposition process of cadmium telluride from chlorine-containing solutions of CdSO4 and the films' structure and electrical properties are studied. The effect of deposition at different temperatures (25-85 °C) and at different cathode potentials (-580 to -610 mV, versus Ag/AgCl) on the films' structure is investigated. Photo-induced current transient spectroscopy of bandgap energy levels has revealed the presence of a few shallow hole traps, which do not exist in films prepared from Cl-free solutions, and, thus, are related to chlorine/structural defect complexes. Due to the presence of the shallow hole traps, the electrical properties of these films and the charge transport mechanism in Au-CdTe devices are remarkably different from those in films deposited from Cl-free solutions. The spectral response of the photocurrent reveals a direct bandgap energy of 1.460 eV at 300 K, which is about 30 meV smaller than the bandgap in films prepared from Cl-free solutions.

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