Electrical levels in nickel doped silicon

Weber

2019

The interaction of substitutional copper atoms (Cus) with interstitial nickel (Nii) or copper (Cui) in crystalline p‐type Si is investigated by DLTS. The mobile interstitial species are introduced at near‐room temperatures by etching in Ni‐ or Cu‐contaminated KOH aqueous solutions. The Cui in‐diffusion is confirmed by the formation of several deep level complexes including the photoluminescence CuPL center which is known to be a Cus atom decorated with three Cui species. The Nii in‐diffusion results in the appearance of three novel electrically active Cu‐Ni complexes; two of them are unstable at room temperature and transform into the third center which possesses a level at 0.16 eV above the top of the valence band. The deep‐level depth profiles below the etched surface affirm that all three Cu‐Ni complexes are formed on the base of one Cus atom by means of addition at least one Nii and one or more Cui species.

Section: Depth Profilesmentioning

confidence: 99%

Electrically Active Copper–Nickel Complexes in p‐Type Silicon

Weber

2019

“…As a result, the isolated

{Ni}_{normals}

and mobile

{Cu}_{normali}

are formed. However, it is not correct as the

{Ni}_{normals}

second acceptor level expected at ≈40 K [ 11 ] is totally absent in Figure 1. In contrast, such close correlation of the pair of levels is hardly by chance.…”

Section: Discussionmentioning

confidence: 99%

Electrical Activation of Interstitial Ni in Cu‐Doped Si

Weber

2021

Modifications of the deep‐level spectrum of copper‐doped Si due to the interaction with mobile nickel species are studied using the deep‐level transient spectroscopy (DLTS) and Laplace‐DLTS techniques. The neutral interstitial nickel atoms (Ninormali) are introduced at near room temperatures by etching in a Ni‐contaminated KOH aqueous solution. Two levels similar to the donor and acceptor levels of substitutional nickel are observed to form as a result of the copper−nickel interaction. Analysis of the depth profiles leads to a tentative conclusion that the levels belong to Ninormals atoms, which are influenced by a nearby copper−nickel complex. The disturbed Ninormals defects are formed via intermediate electrically active Ni−Cu complexes.

“…[26] Note also that the DLTS peak due to the acceptor level of substitutional nickel atom would be expected at %230 K under our conditions. [27,28] However, special assumptions are required to explain how a broad DLTS feature like DT-Ni could be produced by point defects.…”

Section: Contamination With Nimentioning

confidence: 99%

Room‐Temperature Ni Interaction with Deformation‐Induced Defects in Si: A DLTS Study

Soltanovich

Орлов

et al. 2019

The deep‐level (DL) spectrum of plastically deformed n‐type Si and its modification due to interaction with the mobile Ni species are investigated by the deep‐level transient spectroscopy (DLTS) technique. The used geometry of plastic deformation makes it possible to separate the DL centers associated with the dislocations themselves or with dislocation traces, the quasi‐2D defects left by moving dislocations. It is shown that the chemomechanical polishing at room temperature in a Ni‐contaminated slurry results in the appearance of additional DL centers; the principal part of the novel centers forms due to nickel interaction with the dislocation trails. The DLTS signatures of the nickel‐related defects in our plastically deformed samples are similar to those for the nickel‐silicide precipitates.