Electrical model of an inverter body-biased structure in triple-well technology under pulsed photoelectric laser stimulation

Abstract

This study is driven by the need to optimize reliability and failure analysis methodologies based on laser/silicon interactions with an integrated circuit using a triple-well process. Nowadays, Single Event Effects (SEE) evaluations due to radiation impacts are critical in fault tolerance. The prediction of a SEE on electronic device is proposed by the determination and modeling of the phenomena under pulsed laser stimulation. This paper presents measurements of the photoelectric currents induced by a pulsed-laser on an inverter in triple-well Psubstrate/DeepNwell/Pwell structure dedicated to low power body biasing techniques. It reveals the possible activation change of the parasitic bipolar transistors. Based on these experimental measurements, an electrical model is proposed that makes it possible to simulate the effects induced by photoelectric laser stimulation. Therefore this electrical model could be used as a tool of characterization for more complex CMOS circuits under Photoelectrical Laser Stimulation.