Electrical modeling of InSb PiN photodiode for avalanche operation

Abstract

International audienc

Progress on type-II InAs/GaSb superlattice (T2SL) infrared photodetector : from MWIR to VLWIR spectral domains

“…These values are comparable with the ones of InSb photodiodes recently grown by MBE [9]. To complete electrical characterization, noise measurements were performed under dark conditions at 77K on such MWIR diodes [10].…”

Carrier transport mechanisms in reverse biased InSb p-n junctions

“…The breakdown voltage, U B , lies within the range 3 to 5 V. Higher values of the breakdown voltage U B = 14…30 V associated with the avalanche breakdown mechanism were observed in diffused photodiodes [11,12]. At last, in photodiodes produced by molecular beam epitaxy the voltage of avalanche gain was 4.5 V [13]. Thus, significant difference in the breakdown voltage in photodiodes produced by different methods, as well as the nature of tunneling current in photodiodes with a rather wide depletion region (approximately 0.5…1.0 µm at 77 K) requires more thorough investigation, which was the purpose of this study.…”

Infrared Avalanche Photodiode Detectors

“…Impact ionisation process is initiated at high reverse bias in these materials. Evacuation rate of charge carriers from the depletion region is also slow [8][9][10][11][12] . High excess noise factor (F) is reported in Si and III-V based materials due to the involvement of both type of carriers (electrons and holes) in the multiplication process.…”

“…High gain with low noise and wide bandwidth are vital for imaging applications. Avalanche photodiodes perform the functions of detection and amplification for the attenuated optical signals in the battle field and long range applications, especially in space based thermal imaging applications [1][2][3][4][5][6][7][8][9][10][11][12][13][14] . APD provides high internal gain and fast response time, which are needed to meet the system requirements.…”